Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-26T20:11:44.931Z Has data issue: false hasContentIssue false
  • English
  • Français

Uniform Tetragonal WSi2 Layers Formed by RTA

Published online by Cambridge University Press:  28 February 2011

M. Siegal ,
J. J. Santiago ,
J. Van Der Spiegel ,
W. R. Graham  and
M. Setton
M. Siegal
Affiliation:
Laboratory for the Research of Structure and Matter Department of Materials Science and Engineering University of Pennsylvania, Philadelphia, Pa. 19104
J. J. Santiago
Affiliation:
Laboratory for the Research of Structure and Matter Moore School of Electrical Engineering, Center for Sensor Technologies, University of Pennsylvania, Philadelphia, Pa. 19104
J. Van Der Spiegel
Affiliation:
Laboratory for the Research of Structure and Matter Moore School of Electrical Engineering, Center for Sensor Technologies, University of Pennsylvania, Philadelphia, Pa. 19104
W. R. Graham
Affiliation:
Laboratory for the Research of Structure and Matter Department of Materials Science and Engineering University of Pennsylvania, Philadelphia, Pa. 19104
M. Setton
Affiliation:
Laboratory for the Research of Structure and Matter Department of Materials Science and Engineering University of Pennsylvania, Philadelphia, Pa. 19104
Get access

Abstract

Thin films of tungsten silicide with resistivities of 30 – 35 μΩ-cm have been formed by sputter depositing 71 nm of W metal onto (100) oriented, 5 Ω-cm, p-type silicon wafers that were etched in BOE 500 solution. The samples were fast radiatively processed in an RTA system under high vacuum for time anneals ranging from 15 – 50 seconds at a temperature of ∼ 1100°C. The inevitable oxide barrier at the interface is shown to decrease with increasing RTA time.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 673
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Muraka, S.P., Silicides for VLSI Applications, (Academic Press, New York, 1983).Google Scholar
2. Physics Today, Special Issue: Science of VLSI, Oct. 1986.Google Scholar
3. Siegal, M., Santiago, J.J. and Van der Spiegel, J. in “Rapid Thermal Processing”, eds. Sedgwick, T., Seidel, T. and Tsaur, B-Y., Proc. of MRS 1985, 52, 289 (1986).Google Scholar
4. Kato, J., Asahina, M., Shimura, H. and Yamamota, Y., J. Electrochem. Soc., 133(4), 794 (1986).CrossRefGoogle Scholar
5. Choi, K.W. and Ahn, K.Y., J. Vac. Sci. Technol. A, 3(6), 2273 (1985).CrossRefGoogle Scholar
6. Göltz, G., Torres, J., Lajzerowicz, J., Jr. and Bomchil, G., Thin Solid Films, 124, 19 (1985).CrossRefGoogle Scholar
7. Silversmith, D.J., Rathman, D.D. and Mountain, R.W., Thin Solid Films, 93, 413 (1982).CrossRefGoogle Scholar
8. Bartur, M. and Nicolet, M.A., J. Electrochem. Soc., 131(2), 371 (1984).CrossRefGoogle Scholar
9. Bomchil, G., Göeltz, G. and Torres, J., Thin Solid Films, 140, 59 (1986).CrossRefGoogle Scholar
10. Hsieh, H. and Nesbit, L., J. Electrochem. Soc., 131(1), 201 (1984).CrossRefGoogle Scholar
11. Martin, T.L. and Mahan, J.E., J. Mater. Res., 1(3), 493, (1986).CrossRefGoogle Scholar
12. Christian, J.W., The Theory of Transformations in Metals and Alloys,Part I, (Pergammon Press, New York, 1975). pp. 482–504.Google Scholar
13. “Detectability Limits for Auger Analysis”, Perkin-Elmer Technical Bull. No. T8401 (1984).Google Scholar
14. Stickle, W.F., The Phi Interface, 9(2), 6 (1986).Google Scholar