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Undoped and Phosphorus Doped a-Sic:H Films: Investigation of Electrical Properties and Hall Effect

Published online by Cambridge University Press:  01 January 1993

T. Pisarkiewicz ,
T. Stapinski ,
F. Demichelis ,
C.F. Pirn ,
E. Tresso  and
P. Rava
T. Pisarkiewicz
Affiliation:
Institute of Electronics, Academy of Mining and Metallurgy, Krakow, Poland
T. Stapinski
Affiliation:
Institute of Electronics, Academy of Mining and Metallurgy, Krakow, Poland
F. Demichelis
Affiliation:
Dip. Fisica Politecnico,, Torino, Italy
C.F. Pirn
Affiliation:
Dip. Fisica Politecnico,, Torino, Italy
E. Tresso
Affiliation:
Dip. Fisica Politecnico,, Torino, Italy
P. Rava
Affiliation:
Elettrorava S.p.A., Savonera, Torino, Italy
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Abstract

We have deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD), under particular conditions of high H2 dilution and high power density, undoped and phosphorus doped (µc‐SiC:H films. We have obtained n‐doped films with a high band‐gap (E04 up to 2.1 eV) and a high dark conductivity (σ4 up to 10 S cm‐1) which are promising materials for window layers in solar cells. Thermo Electric Power (TEP) measurements allowed to identify the type of majority carriers. The dark conductivity and the Hall mobility have been obtained as a function of temperature in the range 80‐480 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 431
Copyright
Copyright © Materials Research Society 1993

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References

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