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Ultraviolet light emitting diodes using non-polar A-plane AlGaN multiple quantum wells

Published online by Cambridge University Press:  01 February 2011

Ramya Chandrasekaran ,
Anirban Bhattacharyya ,
Ryan France ,
Christos Thomidis ,
Adrian Williams  and
Theodore Moustakas
Ramya Chandrasekaran
Affiliation:
ramyac@bu.edu, Boston University, Electrical Engineering, 8, Saint Mary's Street, Boston, MA, 02215, United States, 617-353-1496
Anirban Bhattacharyya
Affiliation:
anirban@bu.edu, Boston University, Electrical Engineering, Boston, MA, 02215, United States
Ryan France
Affiliation:
Rfrance@Bu.Edu, Boston University, Electrical Engineering, Boston, MA, 02215, United States
Christos Thomidis
Affiliation:
cthomidi@bu.edu, Boston University, Electrical Engineering, Boston, MA, 02215, United States
Adrian Williams
Affiliation:
adrian@bu.edu, Boston University, Electrical Engineering, Boston, MA, 02215, United States
Theodore Moustakas
Affiliation:
tdm@bu.edu, Boston University, Electrical Engineering, Boston, MA, 02215, United States
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Abstract

In this paper, we report the growth and fabrication of non-polar A-plane AlGaN multiple quantum well based ultraviolet light emitting diodes (UV-LEDs). The LEDs were grown on R-plane sapphire substrates using molecular beam epitaxy (MBE). The Current-voltage characteristics of the fabricated devices demonstrated rectifying behavior with a series resistance of 38 ohms. An electro-luminescence emission at 338 nm was obtained.

Keywords

molecular beam epitaxy (MBE)luminescencedevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I04-08
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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