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Ultrathin Slices of Ferroelectric Domain-Patterned Lithium Niobate by Crystal Ion Slicing

Published online by Cambridge University Press:  21 March 2011

David A. Scrymgeour
Affiliation:
Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802
Venkat Gopalan
Affiliation:
Materials Research Laboratory, Pennsylvania State University, University Park, PA 16802
Tony E. Haynes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Bldg. 3003, MS-6048, P. O. Box 2008, Oak Ridge, TN 37831
Miguel Levy
Affiliation:
Physics Department Michigan Technological University, Houghton, MI 49931
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Abstract

We report the successful fabrication of 6 µm thick slices from a ferroelectric domain micro-engineered LiNbO3 wafer device using the crystal ion slicing technique. The device was created by micropatterning ferroelectric domains in a bulk 0.3 mm thick wafer of z-cut LiNbO3, followed by ion-implanting with 3.8 MeV He+ ions to a fluence 5 × 10+16 ions/cm2 to create a damage layer at a well defined depth from the surface. Etching away this damaged layer in dilute hydrofluoric acid results in a liftoff of the top slice in which the ferroelectric domain patterns are left intact. The influence of annealing conditions on liftoff time and depth of etch lines was studied. Helium-Neon laser light was successfully coupled into the device. Due to unintentional breakage of the polished input and output faces, the electro-optic scanning performance has not been characterized so far.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Shibata, Y., Kaa, K., Akishi, K., Kanai, M., Kawai, T., and Kawai, S., Appl. Phys. Lett. 61, 1000 (1992).Google Scholar
2. Curtis, B. J. and Brunner, H.R., Mater. Res. Bull. 10, 515 (1975).Google Scholar
3. Lee, S.Y.; Feigelson, R.S. J. Crystal Gr. Vol. 186, Iss. 4, pp. 594606; (1998).Google Scholar
4. Levy, M., Osgood, R.M., Liu, R., Cross, L.E., Cargill, G.S III, Kumar, A., and Bakhru, H., Appl. Phys. Let. 73, 2293 (1998).Google Scholar
5. Radojevic, A. M., Levy, M., Osgood, R.M., Jr., Dumar, A., Bakhru, H., tian, C., and Evans, C., Appl. Phys. Lett. 74, 3197 (1999).Google Scholar
6. Lotspeich, J. F., IEEE Spectrum, 5, 4552 (1969).Google Scholar
7. Gahagan, K., Gopalan, V., Robinson, J.M., and Jia, Q. X., Appl. Optics, 38, 11861190, (1999).Google Scholar
8. Chen, Q.B., Chiu, Y., Lambeth, D.N., Schlesinger, T.E., and Stancil, D.D., J. Lightwave Technol. 12, 12011202 (1994).Google Scholar
9. Li, J., Cheng, H.C., Kawas, M.J., Lambeth, D.N., Schlesinger, T.E., and Stancil, D.D., IEEE Photonics Technol. Lett. 8, 12861488 (1996).Google Scholar
10. Gopalan, V. and Gupta, M.C., Appl. Phys. Lett. 68, 1323 (1996).Google Scholar
11. Ramadan, R. A., Levy, M., and Osgood, R.M., Jr., “Electro-optic modulation in crystalion-sliced z-cut LiNbO3 thin films”, Appl. Phys. Lett. 76, 1407 (2000).Google Scholar