Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-19T21:23:26.143Z Has data issue: false hasContentIssue false

Ultra-High-Sensitive Image Pickup Tubes Using Avalanche Multiplication in a-Se.

Published online by Cambridge University Press:  21 February 2011

K. Tsuji
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
T. Ohshima
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
T. Hirai
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
N. Gotoh
Affiliation:
Electron Tube Division, Hitachi Ltd., Mobara, Chiba, 297, Japan
K. Tanioka
Affiliation:
NHK Science and Technical Research Laboratories, Setagaya, Tokyo 157, Japan
K. Shidara
Affiliation:
NHK Science and Technical Research Laboratories, Setagaya, Tokyo 157, Japan
Get access

Abstract

Extremely high-sensitive image pickup tubes with sensitivities 1000 times higher than those of conventional tubes are fabricated using the avalanche phenomenon in a-Se as photoconductive targets. The excess avalanche noise of a video signal is found to be much less than that expected, based on the carrier ionization rates. The frequency spectra of the noise currents of both the pickup tubes and sandwich-type photocells are examined. The results are compared with those of a simulation, and it is found that the excess noise can be reduced by the charge-storage operation of imaging devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tanioka, K., Shidara, K., Taketoshi, K., Kawamura, T., Ishioka, S., and Takasaki, Y., IEEE Electron Devices Lett., EDL–8., 388 (1987).Google Scholar
2. Tsuji, K., Takasaki, Y., Hirai, T., Yamazaki, J., and Tanioka, K., Extended Abstracts of 19th. Conf. on Solid State Devices and Materials, Tokyo, 1987, pp 9194.Google Scholar
3. Takasaki, Y., Tsuji, K., Hirai, T., Maruyama, E., Tanioka, K., Yamazaki, J., Shidara, K., and Taketoshi, K., Mat. Res. Soc. Symp. Proc., 118, 387(1988).CrossRefGoogle Scholar
4. Tsuji, K., Takasaki, Y., Hirai, T., and Taketoshi, K., J. Non-Cryst. Solids 114, 94 (1989).Google Scholar
5. Crowell, C.R. and Sze, S.M., Appl. Phys. Lett., 9, 242(1966).CrossRefGoogle Scholar
6. McIntyre, R.J., IEEE Trans, on Electron Devices ED–13., 164(1966).Google Scholar
7. Okano, F., Kumada, J., and Tanioka, K., SMPTE Journal, Aug. 612 (1990).Google Scholar
8. Sakai, H., Takasaki, Y., Gotoh, N., Hirai, T., Egami, N., and Tanioka, K., IEEE Tokyo Section, Denshi Tokyo, 29, 155(1990).Google Scholar
9. Tanioka, K., Yamazaki, J., and Hirai, T., IEEE Tokyo Section, Denshi Tokyo, 23., 160 (1990).Google Scholar
10. Taketoshi, K., Tanioka, K., Andoh, F., Yamazaki, J. and Takasaki, Y., Jpn. J. Appl. Phys. 28, 178(1989).Google Scholar
11. Ohshima, T., Tsuji, K., Sameshima, K., Hirai, T., Shidara, K., and Taketoshi, K., Jpn. J. Appl. Phys. Lett, (to be published).Google Scholar
12. Sze, S.M., Physics of Semiconductor Devices, Jhon Willey and Sons (1981) 2nd ed., chaps. 1 and 13.Google Scholar