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Ultrafast Silicon Based Internal Photoemission Detectors

Published online by Cambridge University Press:  10 February 2011

M. Löken ,
Th. Lipinsky ,
L. Kappius ,
S. Mantl  and
Ch. Buchal
M. Löken
Affiliation:
Institut für Schicht- und lonentechnik (ISI-IT), Forschungszentrum Juelich GmbH, D-52425 Juelich, Germany
Th. Lipinsky
Affiliation:
Institut für Schicht- und lonentechnik (ISI-IT), Forschungszentrum Juelich GmbH, D-52425 Juelich, Germany
L. Kappius
Affiliation:
Institut für Schicht- und lonentechnik (ISI-IT), Forschungszentrum Juelich GmbH, D-52425 Juelich, Germany
S. Mantl
Affiliation:
Institut für Schicht- und lonentechnik (ISI-IT), Forschungszentrum Juelich GmbH, D-52425 Juelich, Germany
Ch. Buchal
Affiliation:
Institut für Schicht- und lonentechnik (ISI-IT), Forschungszentrum Juelich GmbH, D-52425 Juelich, Germany (e-mail: c.buchal@fz-juelich.de)
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Abstract

We have studied different metal-silicon-metal (MSM) Schottky barrier photodiodes for the detection of visible and infrared light. We investigated the different Schottky barriers from Ti, Cr and Pt. At infrared wavelengths, the Schottky contacts provide electrons and holes by “internal photoemission” into the Si. The lowest Schottky barrier determines the long wavelength cutoff and the current noise. The temporal response was measured byultrashort (100 fs) laser pulses from a Ti:A1203 laser, which were converted by an optical parametric oscillator to a wavelength of 1.1 to 1.6 μm. The measurements were performed between 30 K and room temperature. The best detectors show a pulse width of 3.2ps FWHM at 1.25 μm wavelength and room temperature. To our knowledge this is the fastest infrared response for silicon based diodes ever reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 167
Copyright
Copyright © Materials Research Society 2000

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References

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