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Ultra Thin Cu film Fabrication by Supercritical Fluid Deposition for ULSI Metallization

Published online by Cambridge University Press:  01 February 2011

Takeshi Momose ,
Masakazu Sugiyama  and
Yukihiro Shimogaki
Takeshi Momose
Affiliation:
momo@dpe.mm.t.u-tokyo.ac.jp, The University of Tokyo, Department of Materials Engineering,, 7-3-1 Hongo, Bunkyo-ku, Tokyo, N/A, Japan, +81-3-5841-7131, +81-3-5841-6947
Masakazu Sugiyama
Affiliation:
sugiyama@ee.t.u-tokyo.ac.jp, The University of Tokyo, Institute of Engineering Innovation, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
Yukihiro Shimogaki
Affiliation:
shimo@dpe.mm.t.u-tokyo.ac.jp, The University of Tokyo, Department of Materials Engineering,, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
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Abstract

Initial nucleation and succeeding coalescence in supercritical fluid deposition (SCFD) of Cu was studied in situ by using our devised monitoring technique, i.e. surface reflectivity measurement of visible white light. Fabrication of 10nm-thick smooth and continuous Cu film required by ULSI metallization, was succeeded. Complete filling without any seems and voids into various via patterns of 50 - 200 nm in diameter and 1 μm in depth was also achieved, which was revealed through angled polishing of patterned substrate.

Keywords

Cuchemical reactionfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 992: Symposium D – Deposition on Nonplanar Substrates , 2007 , 0992-D02-04
Copyright
Copyright © Materials Research Society 2007

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References

1. Havemann, R. H. and Hutchby, J. A., Proc. of the IEEE 89 586 (2001).Google Scholar
2. Blackburn, J. M., Long, D. P., Cabanas, A., Watkins, J. J., SCIENCE 294 141 (2001).Google Scholar
3. Kondoh, E. and Kato, H., Micro. Eng. 64 495 (2002).Google Scholar
4. Momose, T., Sugiyama, M.1, and Shimogaki, Y., Jpn. J. of Appl. Phys., 44 L1199 (2005).Google Scholar
5.International Technology Roadmap for Semiconductors (ITRS) 2005edition.Google Scholar
6. Momose, T., Sugiyama, M., and Shimogaki, Y., Proc. Advanced Metallization Conference 2004 (Material Research Society, 2005) pp.627.Google Scholar
7. Kim, H., Koseki, T., Ohba, T., Ohta, T., Kojima, Y., Sato, H., and Shimogaki, Y., J. Electrochem. Soc. 152 G594 (2005).Google Scholar
8. Kim, H., Kojima, Y., Sato, H., Yoshii, N., Hosaka, S., and Shimogaki, Y., Jpn. J. Appl. Phys. 45 L233 (2006).Google Scholar
9. Kim, H., Koseki, T., Ohba, T., Ohta, T., Kojima, Y., Sato, H., Hosaka, S., and Shimogaki, Y., Appl. Surf. Sci. 252 3938 (2006).Google Scholar