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Ultra Low k Mesoporous Silica Films: Synthesis, Film Properties and One-Level Copper Damascene Evaluation

Published online by Cambridge University Press:  17 March 2011

Changming Jin ,
J. Liu ,
X. Li ,
C. Coyle ,
J. Birnbaum ,
G. E. Fryxell ,
R. E. Williford  and
S. Baskaran
Changming Jin
Affiliation:
International SEMATECH, 2706 Montopolis Dr., Austin, TX 78741
J. Liu
Affiliation:
Pacific Northwest National Laboratory, 902 Battelle Boulevard Mail Stop K2-44, PO Box 999, Richland, WA 99352
X. Li
Affiliation:
Pacific Northwest National Laboratory, 902 Battelle Boulevard Mail Stop K2-44, PO Box 999, Richland, WA 99352
C. Coyle
Affiliation:
Pacific Northwest National Laboratory, 902 Battelle Boulevard Mail Stop K2-44, PO Box 999, Richland, WA 99352
J. Birnbaum
Affiliation:
Pacific Northwest National Laboratory, 902 Battelle Boulevard Mail Stop K2-44, PO Box 999, Richland, WA 99352
G. E. Fryxell
Affiliation:
Pacific Northwest National Laboratory, 902 Battelle Boulevard Mail Stop K2-44, PO Box 999, Richland, WA 99352
R. E. Williford
Affiliation:
Pacific Northwest National Laboratory, 902 Battelle Boulevard Mail Stop K2-44, PO Box 999, Richland, WA 99352
S. Baskaran*
Affiliation:
Pacific Northwest National Laboratory, 902 Battelle Boulevard Mail Stop K2-44, PO Box 999, Richland, WA 99352
*
*author for correspondence: suresh.baskaran@pnl.gov
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Abstract

Spin-on mesoporous silica films were prepared on eight-inch wafers at SEMATECH by condensation of a silicate network around surfactant micellar structures. Copper single-damascene one-level test structures were built using mesoporous silica as the intermetal dielectric. No major structural failures were observed after chemical mechanical planarization on both blanket films and patterned wafers, indicating relatively good mechanical integrity for a highly porous structure. A simple silane spin-coating step used at SEMATECH on the films appears to be insufficient for complete dehydroxylation and silylation. The electrical test results on the metal comb structures showed good capacitance and leakage current distributions. However, capacitance and leakage current changes were observed after each post-CMP process step, and these changes could be correlated to moisture desorption/outgassing, which was also noted during k measurement. With controlled film synthesis and dehydroxylation conditions, mesoporous silica films with k ≤2.0 and elastic modulus of 4.0 GPa have been synthesized at PNNL. The results of the Cu one-level metal screening tests at SEMATECH combined with properties obtained at PNNL indicate that mesoporous molecularly-templated silicate films hold promise as ultra low k intermetal dielectrics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D4.5.1
Copyright
Copyright © Materials Research Society 2000

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References

1. Yang, H., Kuperman, A., Coombs, N., Mamiche-Afara, S., Ozin, G. A., Nature (1996) V.379, 703.10.1038/379703a0Google Scholar
2. Yang, H., Coombs, N., Sokolov, I., Ozin, G. A., G.A., , Nature (1996) V.381, 589.10.1038/381589a0Google Scholar
3. Aksay, I. A., Trau, M., Manne, S.. Honma, I., Yao, N., Zhou, L., Fenter, P., Eisenberger, P. M., Gruner, S. M., Science (1996) 273, 892.10.1126/science.273.5277.892Google Scholar
4. Liu, J., Bontha, J. R., Kim, A. Y. and Baskaran, S., MRS Symp. Proc. (1996) Vol. 431, pp245–5010.1557/PROC-431-245Google Scholar
5. Ogawa, M., Chem. Commun. (1996) 1149–50 Google Scholar
6. Bruinsma, P. J., Hess, N. J., Bontha, J. R., Liu, J. and Baskaran, S., MRS Symp. Proc. (1997) Vol. 445, pp105–110 Google Scholar
7. Bruinsma, P. J., Bontha, J. R., Liu, J. and Baskaran, S., U. S. Patent No. 5,922, 299, July 13, 1999 Google Scholar
8. Lu, Y., Ganguli, R., Drewien, C. A., Anderson, M. T., Brinker, C. J., Gong, W., Guo, Y., Soyez, H., Dunn, B., Huang, M. H. and Zink, J. I., Nature (1997) 389, pp364–6810.1038/38699Google Scholar
9. Zhao, D., Yang, P., Melosh, N., Feng, J., Chmelka, BF, and Stucky, GD, Advanced Materials (1998) Vol. 10 No. 16, pp 1380–1385 10.1002/(SICI)1521-4095(199811)10:16<1380::AID-ADMA1380>3.0.CO;2-83.0.CO;2-8>Google Scholar
10. Baskaran, S., Liu, J., Domansky, K., Kohler, N., Li, X., Coyle, C., Fryxell, G. E., Thevuthasan, S. and Williford, R. E., Proceedings of SEMATECH Ultra Low K Workshop, pp 55–80 (1999) SEMATECH, Austin, TXGoogle Scholar
11. Brinker, C. J., Lu, Y. and Fan, H., Proceedings of SEMATECH Ultra Low K Workshop, pp 05–38 (1999) SEMATECH, Austin, TXGoogle Scholar
12. Baskaran, S., Liu, J., Domansky, K., Kohler, N., Li, X., Coyle, C., Fryxell, G. E., Thevuthasan, S. and Williford, R. E., Advanced Materials (2000) Vol. 12 No. 4, pp 291–9410.1002/(SICI)1521-4095(200002)12:4<291::AID-ADMA291>3.0.CO;2-P3.0.CO;2-P>Google Scholar
13. Jin, C., Luttmer, J. D., Smith, D. M., Ramos, T. A., Mat. Res. Soc. Bull (1997) Vol 10, pp 39–43 10.1557/S0883769400034187Google Scholar
14. Toma, D., Muramatsu, M., Nagashima, S., Takeshita, K., Kojima, S., Fujii, H., Nishimura, K., Slessor, M., Roberts, R. and Forester, L., Proceedings of SEMATECH Ultra Low K Workshop, pp 469–84 (1999) SEMATECH, Austin, TXGoogle Scholar