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Uhv-Tem Studies of Laser-Induced Damage in Silicon

Published online by Cambridge University Press:  25 February 2011

T. S. Savage ,
P. Xu ,
R. Ai ,
D. Dunn  and
L. D. Marks
T. S. Savage
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
P. Xu
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
R. Ai
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
D. Dunn
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
L. D. Marks
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
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Abstract

The effects of pulsed laser irradiation on silicon (111) single crystal thin samples were studied in a ultra-high vacuum transmission electron microscope. Samples were found to cleave along (110) planes under the laser beam. The formation of dislocation networks was also observed. The cleaving did not seem to originate from previously observed defect areas, but from random places, and is believed to be caused by thermal shock from laser beam heating. Bulk defects in the specimens, such as stacking fault tetrahedra and dislocations, were not observed to be affected by the laser treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 495
Copyright
Copyright © Materials Research Society 1992

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References

[1] Vohra, A., Bansal, S.K., Sharma, R.K., Srivastava, G.P., Garg, C.L. and Mull, R.P., J. Phys. D: Appl. Phys., 23, 56(1990).Google Scholar
[2] Bertolotti, M., Pasquale, F. De, Marietti, P., Sette, D. and Vitali, G., J. Appl. Phys., 38, 4088(1967).Google Scholar
[3] Birnbaum, M., J. Appl. Phys., 36, 3688(1965).CrossRefGoogle Scholar
[4] Narayan, J., Young, R.T. and White, C.W., J. Appl. Phys., 49, 3912(1978).Google Scholar
[5] Ai, R., Savage, T. S., Xu, P., Zhang, J. P. and Marks, L. D., 1991, this volume.Google Scholar
[6] Abraham, E. and Halley, J.M., Appl. Phys. A: Solids and Surfaces, 42, 279(1987)CrossRefGoogle Scholar