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A Two-Step Low-Temperature Process For A P-N Junction Formation Due To Hydrogen Enhanced Thermal Donor Formation In P-Type Czochralski Silicon

Published online by Cambridge University Press:  10 February 2011

R. Job ,
W. R. Fahrner ,
N. M. Kazuchits  and
A. G. Ulyashin
R. Job
Affiliation:
University of Hagen, P.O. Box 940, D-58084 Hagen, Germany
W. R. Fahrner
Affiliation:
University of Hagen, P.O. Box 940, D-58084 Hagen, Germany
N. M. Kazuchits
Affiliation:
Belarussian State University, Minsk, 220050, Belarus
A. G. Ulyashin
Affiliation:
Belarussian State Polytechnical Academy, Minsk, 220027, Belarus.
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Abstract

The incorporation of hydrogen into standard p-type Czochralski (Cz) silicon (≥1 Ωcm) by a 110 MHz plasma treatment at 260°C leads to the formation of an n-type region due to hydrogen enhanced thermal donor (TD) formation in hydrogenated regions of the wafer, if a subsequent annealing in air is applied at 450°C. Spreading resistance probe (SRP) and light beam induced current (LBIC) measurements were used for the experimental analysis. The p-n junction depth, i. e. the counter doping by TDs, depends on the initial doping level of the p-type substrate, and therefore on the post-hydrogenation annealing time. The penetration of the n-type region into the wafer bulk is driven by a rapid hydrogen diffusion. The essential process for a TD generation is the creation of metastable hydrogen molecular species around 260°C and their decay at 450°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 337
Copyright
Copyright © Materials Research Society 1998

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References

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