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Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors

Published online by Cambridge University Press:  03 September 2012

Narihiko Maeda ,
Tadashi Saitoh ,
Kotaro Tsubaki ,
Toshio Nishida  and
Naoki Kobayashi
Narihiko Maeda
Affiliation:
NTT Basic Research Laboratories, Physical Science Laboratory, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan
Tadashi Saitoh
Affiliation:
NTT Basic Research Laboratories, Physical Science Laboratory, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan
Kotaro Tsubaki
Affiliation:
NTT Basic Research Laboratories, Physical Science Laboratory, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan
Toshio Nishida
Affiliation:
NTT Basic Research Laboratories, Physical Science Laboratory, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan
Naoki Kobayashi
Affiliation:
NTT Basic Research Laboratories, Physical Science Laboratory, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan
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Extract

Two-dimensional electron gas transport properties have been investigated in nitride double-heterostructures. A striking effect has been observed that the two-dimensional electron gas mobility has been drastically enhanced in the AlGaN/GaN/AlGaN doubleheterostructure, compared with that in the conventional AlGaN/GaN singleheterostructure. The observed mobility enhancement has been shown to be mainly due to the enhanced polarization-induced electron confinement in the double-heterostructure, and additionally due to the improvement of the interface roughness in the structure. Device operation of an AlGaN/GaN/AlGaN double-heterostructure field effect transistor has been demonstrated: a maximum transconductance of 180 mS/mm has been obtained for a 0.4 mm-gate-length device. In the double-heterostructure using InGaN channel, the increased capacity for the two-dimensional electron gas has been observed. The AlGaN/(In)GaN/AlGaN double-heterostructures are effective for improving the electron transport properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W4.7
Copyright
Copyright © Materials Research Society 1999

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