Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-28T15:56:09.083Z Has data issue: false hasContentIssue false
  • English
  • Français

Turn-on Process in High Voltage 4H-SiC Thyristors

Published online by Cambridge University Press:  10 February 2011

N. V. Dyakonova ,
M. E. Levinshtein ,
J. W. Palmour ,
S. L. Rumyantsev  and
R. Sing
N. V. Dyakonova
Affiliation:
A.F. loffe Physico-Technical Institute., 194021 St.Petersburg, Russia
M. E. Levinshtein
Affiliation:
A.F. loffe Physico-Technical Institute., 194021 St.Petersburg, Russia
J. W. Palmour
Affiliation:
Cree Research Inc., 4600 Silicon Drive, Durham, NC 27703, USA
S. L. Rumyantsev
Affiliation:
A.F. loffe Physico-Technical Institute., 194021 St.Petersburg, Russia
R. Sing
Affiliation:
Cree Research Inc., 4600 Silicon Drive, Durham, NC 27703, USA
Get access

Abstract

The turn-on process and the steady state current-voltage characteristics have been investigated in 4H-SiC thyristors with a forward breakover voltage close to 700 V and pulse switch current density of 16 000 A/cm2. The rise current constant, τr, has been found to decrease monotonically with temperature: τr, ≈ 10.5 nsec at T = 300 K and τr ≈ 1.2 nsec at T = 500 K at high bias Uo ≥ 300 V. The value of τr ≈ 1.2 nsec is the lowest observed value for SiC thyristors. At very high current density, j ≥ 5 103 A/cm2, the residual voltage drop for 4H-SiC thyristors is lower than for identically rated Si thyristors. The voltage drop Udo decreases monotonically with temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 211
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Edmond, J.A., Palmour, J.W., Carter, C.H., Proc. of Intern. Semicond. Dev. Res. Symp. ISDRS-91, Charlottesville, USA, 1991, p. 48Google Scholar
2. Palmour, J W., Edmont, J.A., Kong, H.S., Carter, C.H. Jr, Silicon Carbide and Related Materials, Inst. of Phys. Conf Proc. 137 (IOP Publishing, 1994), pp. 499–502.Google Scholar
3. Palmour, J.W., Allen, S.T., Singh, R., Lipkin, L.A., and Waltz, D.G., Silicon Carbide and Related Materials 1995, Institute of Physi. Conf. Series No. 142, Nakashima, S., Matsunami, H., Yoshida, S., and Harima, H., eds. (Inst. of. Phys.Publ.,Bristol,1996), pp.813–816.Google Scholar
4. Dyakonova, N.V., Levinshtein, M.E., Palmour, J.W., Rumyantsev, S.L. and Singh, R., Electron. Letters, v. 33, N 10, pp. 914–915 (1997).Google Scholar
5. Palmour, J W., Singh, R. and Waltz, D.G., IEEE DRC Conf. Rec. p. 54–55 (1996)Google Scholar
6. Gerlach, W., Thyristoren, Springer-Verlag, Heidelberg, 1981, p. 137.Google Scholar
7. Levinshtein, M.E., Palmour, J.W., Rumyantsev, S.L. and Singh, R., Int. Phys. Conf. Ser. No 155, Chapter 8, Proceedengs of 23rd Intern. Symposium on Compound Semiconductors (ISCS- 23), Sept.23–27,1996, St.Petersburg, Russia, pp. 601–603.Google Scholar
8. Lebedev, A.A., Ivanov, A.I., Chelnokov, V. E., Radiot. I Electron., 11, p. 1458–1459 (1966).Google Scholar
9. Levinshtein, M.E., Palmour, J.W., Rumyantsev, S.L. and Singh, R., Semicond. Sci. and Technol. ( accepted for publication), 1997.Google Scholar
10. Lampert, M. and Mark, P., Current Injection in Solids, Academic Press, New York and London, 1970, p. 98.Google Scholar