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Tunneling Current Through MIS Structures With Ultra-Thin Insulators

Published online by Cambridge University Press:  15 February 2011

H. Fujioka ,
H.-J. Wann ,
D.-G. Park ,
Y.-C. King ,
Y.-F. Chyan ,
M. Oshima  and
C. Hu
H. Fujioka
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720, fujioa@bsim.eecs.berkely.edu
H.-J. Wann
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720, fujioa@bsim.eecs.berkely.edu
D.-G. Park
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720, fujioa@bsim.eecs.berkely.edu
Y.-C. King
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720, fujioa@bsim.eecs.berkely.edu
Y.-F. Chyan
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720, fujioa@bsim.eecs.berkely.edu
M. Oshima
Affiliation:
Department of Applied Chemistry, University of Tokyo, Bunkyo-ku, Japan 113
C. Hu
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA94720, fujioa@bsim.eecs.berkely.edu
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Abstract

Leakage currents through MIS (Metal Insulator Semiconductor) structures with several ultra-thin (14–30Å) insulators (silicon dioxide, silicon oxynitride, and silicon nitride) have been investigated. The leakage currents through both dioxide and oxynitride films sandwiched between n-type poly-Si gates and n-type substrates can be well fitted by the equation for the electron direct tunneling mechanism using the same effective mass and barrier height. This result indicates that incorporation of a minute amount of nitrogen atoms does not seriously affect the basic electrical properties of the oxide films. Leakage currents through ultra-thin nitride can te also fitted with the equation for the direct tunneling mechanism without assuming any extra conduction mechanisms such as hopping through defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 415
Copyright
Copyright © Materials Research Society 1996

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