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Tuning Band Energies in a Combined Axial and Radial GaAs/GaP Heterostructure

Published online by Cambridge University Press:  31 March 2014

Yuda Wang
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, Ohio, USA
Parveen Kumar
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, Ohio, USA
Leigh Morris Smith
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, Ohio, USA
Howard E. Jackson
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, Ohio, USA
Jan M. Yarrison-Rice
Affiliation:
Department of Physics, Miami University, Oxford, Ohio, USA
Craig Pryor
Affiliation:
Department of Physics, University of Iowa, Iowa City, Iowa, USA
Jung-Hyun Kang
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, Australian Capital Territory, Australia.
Qiang Gao
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, Australian Capital Territory, Australia.
Hark Hoe Tan
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, Australian Capital Territory, Australia.
Chennupati Jagadish
Affiliation:
Department of Electronic Materials Engineering, Australian National University, Canberra, Australian Capital Territory, Australia.
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Abstract

We use Raman scattering to study the spatially-resolved strain and stress in a complex zinc blende GaAs/GaP heterostructured nanowire which contains both axial and radial interfaces. The nanowires are grown by metal-organic chemical vapor deposition in the [111] direction with Au nano particles as catalysts, High spatial resolution Raman scans along the nanowires show the GaAs/GaP interface is clearly identifiable. We interpret the phonon energy shifts in each material as one approaches the interface.

Type
Articles
Copyright
Copyright © Materials Research Society 2014 

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References

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