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Tuned Infrared Emission From Lithographically-Defined Silicon Surface Structures

Published online by Cambridge University Press:  10 February 2011

James T. Daly ,
Edward A. Johnson ,
William A. Stevenson ,
Anton C. Greenwald ,
John A. Wollam ,
Thomas George  and
Eric W. Jones
James T. Daly
Affiliation:
Ion Optics, Inc., Waltham, MA 02452
Edward A. Johnson
Affiliation:
Ion Optics, Inc., Waltham, MA 02452
William A. Stevenson
Affiliation:
Ion Optics, Inc., Waltham, MA 02452
Anton C. Greenwald
Affiliation:
Ion Optics, Inc., Waltham, MA 02452
John A. Wollam
Affiliation:
Ion Optics, Inc., Waltham, MA 02452
Thomas George
Affiliation:
Jet Propulsion Laboratory, Pasadena, CA 91109
Eric W. Jones
Affiliation:
Jet Propulsion Laboratory, Pasadena, CA 91109
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Abstract

Photonic bandgap structures have received much attention as optical and infrared filters with controllable narrow-band absorbance. There is a need, however, for the same kind of control of the thermal emittance of surfaces for applications ranging from control of radiative heat transfer to gas absorption spectroscopy. We report on the fabrication of photonic bandgap structures on silicon surfaces using standard lithographic techniques. Substrate resistivity varied from n− to n+ and in some cases background surface emissivity was suppressed with a high reflectivity coating such as aluminum. We have measured the infrared reflectance and emittance of these patterned surfaces. Peak absorption wavelength and spectral purity (linewidth) correlate with photonic bandgap feature size and spacing as well as surface conductivity. We demonstrate band emission with a sharp short wavelength cut-off from these structures when heated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 175
Copyright
Copyright © Materials Research Society 2000

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