Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-27T20:53:57.541Z Has data issue: false hasContentIssue false

Tribological Properties of Tetrahedral Carbon Films Deposited by Filtered Cathodic Vacuum Arc Technique

Published online by Cambridge University Press:  15 February 2011

X. Shi
Affiliation:
School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798
B. K. Tay
Affiliation:
School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798
D. I. Flynn
Affiliation:
School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798
Z. Sun
Affiliation:
School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798
Get access

Abstract

Ta-C films have been deposited using FCVA technique. The hardness and Young's modulus of the films on both silicon and sapphire substrates are determined by an ultra low load depth sensing nanoindenter to examine their dependence on the carbon ion energy. An optimum ion energy around 80 to 90 eV has been found, which coincides with the energy at which the sp3 content and film density reach maximum values. At this ion energy, the hardness, modulus and critical load of a 60 nm film on sapphire exhibit maximum values of 60 GPa, 580 GPa and 7 mN, respectively, whilst the frictional coefficient shows a minimum of 0.16.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Aksenov, I. I., Belous, V. A., Padalka, V. G., Khoroshikh, V. M., Sov. J. Plasma Phys. 4,425 (1978).Google Scholar
2. Aksenov, I. I., Vakula, S. I., Padalka, V. G., Strelnitskii, V. E., and Khoroshikh, V. M., Sov. Phys. Tech. Phys. 25, 1164 (1980).Google Scholar
3. Martin, P. J., Filipczuk, S. W., Netterfield, R. P., Field, J. S., Whitnall, D. F., McKenzie, D. R., J. Mater. Sci. Lett. 7, 410 (1988).Google Scholar
4. Martin, P. J., Netterfield, R. P., Kinder, T. J., and Descotes, L., Surf. Coat. Technol. 49, 239 (1991).Google Scholar
5. McKenzie, D. R., Muller, D. and Pailthorpe, B. A., Phys. Rev. Lett. 67, 773 (1991).Google Scholar
6. Falabella, S., Boercker, D.B., and Sanders, D.M., Thin Film Soilds, 236, 82 (1993).Google Scholar
7. Fallon, P. J., Veerasamy, V. S., Davis, C. A., Robertson, J., Amaratunga, G. A. J., Milne, W. I., and Koskinen, J., Phys. Rev B, 48, 4777 (1993).Google Scholar
8. McKenzie, D R, Muller, D, Pailthorpe, B A, Wang, Z H, Kratvchinskaia, E, Segal, D, Lukins, P B, Swift, P D, Martin, P J, Amaratunga, G, Gaskell, P H and Saeed, A, Diamond Relat. Mater., 1, 51(1991).Google Scholar
9. Veerasamy, V S, Amaratunga, G A J, Wilne, W I, Hewitt, P, Fallon, P J, McKenzie, D R and Davis, C A, Diamond Relat. Mater., 2, 782 (1993).Google Scholar
10. Veerasamy, V S, Amaratunga, G A J, Park, J S, Wilne, W I, MacKenzie, H S and McKenzie, D R, J. Appl. Phys. Lett., 64 (17), 2297 (1994).Google Scholar
11. Xu, Shi, Tay, B K, Tan, H S, Zhong, Li, Tu, Y Q, J. Appl. Phys., 79, (1996) - to be publishedGoogle Scholar
12. Lifshitz, Y, Lempert, G D and Rotter, S, Diamond And Related Materials, 3, 542 (1994)Google Scholar
13. Silva, S.R.P., Milne, W.I., Xu, Shi, Tay, B.K. and Tan, H.S., J. Appl. Phys. - under reviewGoogle Scholar
14. Pharr, G.M. and Oliver, W.C., MRS Bulletin 17, 28 (1992)Google Scholar
15. Oliver, W.C. and Pharr, G.M., J. Mater Res. 7, 1564 (1992)Google Scholar
16. Weiler, M., Sattel, S., Jung, K., Ehrhardt, H., Veerasamy, V.S. and Robertson, J., Appl. Phys. Lett. 64, 2797 (1994)Google Scholar
17. Pharr, G.M., Callahan, D.L., McAdams, S.D. and Tsui, T.Y., Appl. Phys. Lett. - to be publishedGoogle Scholar
18. Anders, S, Anders, A et al, Meeting of the Materials Research Society, LBL-36768, UC–404, San Francisco, April (1995)Google Scholar
19. Coll, B.F., Chhowalla, M., Surf. Coat. Technol. 79, 76 (1996).Google Scholar