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Trapping of Oxygen at Homoepitaxial Si-Si Interfaces Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  28 February 2011

R. Hull ,
M. E. Twigg ,
J. C. Bean ,
J. M. Gibson  and
D. C. Joy
R. Hull
Affiliation:
AT&T Bell Laboratories, 600 Mountain Av., Murray Hill, NJ 07974 Hewlett Packard Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94304
M. E. Twigg
Affiliation:
AT&T Bell Laboratories, 600 Mountain Av., Murray Hill, NJ 07974
J. C. Bean
Affiliation:
AT&T Bell Laboratories, 600 Mountain Av., Murray Hill, NJ 07974
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Av., Murray Hill, NJ 07974
D. C. Joy
Affiliation:
AT&T Bell Laboratories, 600 Mountain Av., Murray Hill, NJ 07974
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Abstract

Interfaces between Si substrates and epitaxial Si buffer layers grown by Molecular Beam Epitaxy (MBE) are shown to contain a high density of SiOx pockets for certain sustrate preparation conditions. It is also shown that post-deposition thermal annealing of these structures grown upon Czochralski wafers can lead to a greatly increased defect density at the interface. The primary model proposed for this increase is trapping of background oxygen diffusing from the bulk of the Czochralski substrate wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 317
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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