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Trapping Dynamics And Charged Defects: Light Induced Studies in a-Si:H and a-Si1-xGe:H

Published online by Cambridge University Press:  01 January 1993

J. Hautala  and
J.D. Cohen
J. Hautala
Affiliation:
University of Oregon, Department of PhysicsEugene, OR 97403
J.D. Cohen
Affiliation:
University of Oregon, Department of PhysicsEugene, OR 97403
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Abstract

Bandtail defect carrier trapping dynamics in high quality photo-CVD grown a-Si1-xGex:H (x=0.3 and 0.62) and PECVD deposited a-Si:H films were studied using photo-modulated electron spin resonance (PMESR). Comparison of the dark spin densities with junction capacitance (drive-level profiling) methods indicate that a majority of the defects are neutral in the a-Si:H and 30% Ge samples, but the majority of the defects in the 62% Ge sample are charged. Lineshape deconvolution of the PMESR signals in the in-phase and quadrature phase as a function of photo-modulation frequency, excitation energy and excitation intensity for both intrinsic (state A) and light soaked (state B) states revealed three significant insights: in state A all samples behave similarly, state B behavior of the a-Si:H is dramatically different from the state B alloyed samples, and strong evidence for 'safe hole traps' (SHT) is observed in the state B a-Si:H material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 667
Copyright
Copyright © Materials Research Society 1993

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