Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-19T23:02:16.571Z Has data issue: false hasContentIssue false
  • English
  • Français

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

Published online by Cambridge University Press:  01 February 2011

Yahya Alivov ,
Xiao Bo ,
Fan Qian ,
Daniel Johnstone ,
Cole Litton  and
Hadis Morkoç
Yahya Alivov
Affiliation:
yialivov@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 W. Main Street, Richmond, VA, 23284, United States
Xiao Bo
Affiliation:
xiaob@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 W. Main Street, Richmond, VA, 23284, United States
Fan Qian
Affiliation:
fanq@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 W. Main Street, Richmond, VA, 23284, United States
Daniel Johnstone
Affiliation:
djohnstone@semetrol.com, SEMETROL, Chesterfield, VA, 23838, United States
Cole Litton
Affiliation:
Cole.Litton@sbcglobal.net, Retired, Air Force Research Laboratory (AFRL/MLPS), Dayton, OH, 45433, United States
Hadis Morkoç
Affiliation:
hmorkoc@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 W. Main Street, Richmond, VA, 23284, United States
Get access

Abstract

The conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

Keywords

II-VIsputteringelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K10-21
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Özgür, Ü., Alivov, Ya. I., Liu, C., Teke, A., Reshchikov, M., Doğan, S., Avrutin, V., Cho, S.–J., and Morkoç, H., J. Applied Physics, 98, 041301 (2005).Google Scholar
2 Alferov, Zh. I., Semiconductors, 98, 3 (1998).Google Scholar
3 Carcia, P. F., McLean, R. S., and Reilly, M. H., Appl. Phys. Lett. 88, 123509 (2006)Google Scholar
4 Nishi, J., Ohmoto, A., Ohtani, K., Ohno, H., and Kawasaki, M., Jpn. J. of Appl. Phys., 44, L 1193 (2005)Google Scholar
5 Alivov, Ya. I., Kalinina, E. V., Cherenkov, A. E., Look, D. C., Ataev, B. M., Omaev, A. K., Chukichev, M. V., and Bagnall, D. M., Appl. Phys. Lett. 83, 4719 (2003).Google Scholar
6 Osinsky, A., Dong, J. W., Kauser, M. Z., Hertog, B., Dabiran, A. M., Chow, P. P., Pearton, S. J., Lopatiuk, O., and Chernyak, L., Appl. Phys. Lett. 85, 4272 (2004).Google Scholar
7 Alivov, Ya. I., Van Nostrand, J.E., Look, D.C., Chukichev, M.V., and Ataev, B.M., Appl. Phys. Lett. 83, 2943 (2003).Google Scholar
8 Yu, Qing-Xuan, Xu, Bo, Wu, Qi-Hong, Liao, Yuan, Wang, Guan-Zhong, Fang, Rong-Chuan, Lee, Hsin-Ying and Lee, Ching-Ting, Appl. Phys. Lett., 83, 4713 (2003).Google Scholar
9 Rogers, D. J., Teherani, F. Hosseini, Yasan, A., Minder, K., Kung, P., and Razeghi, M., Appl. Phys. Lett. 88, 141918 (2006)Google Scholar
10 Alivov, Ya. I., Özgür, Ü., Doğan, S., Johnstone, D., Avrutin, V., Onojima, N., Liu, C., Xie, J., Fan, Q., and Morkoç, H., Appl. Phys. Lett. 86, 241108 (2005)Google Scholar
11 Alivov, Ya. I., Johnstone, D., Özgür, Ü., Avrutin, V., Fan, Q., Akarca-Biyikli, S., and Morkoç, H. Japanese Journal of Applied Physics, Part 1, 44, 7281(2005)Google Scholar
12 Alivov, Ya. I., Bo, X., Akarca-Biyikli, S., Fan, Q., Xie, J., Biyikli, N., Zhu, K., Johnstone, D., and Morkoç, H., J. Electron. Materials 35, 520 (2006)..Google Scholar
13 Yuen, Clement, Yu, S. F., Lau, S. P., Rusli, , and Chen, T. P., Appl. Phys. Lett. 86, 241111 (2005)Google Scholar
14 Lang, D.V., J. Appl. Phys. 45, 3023 (1974).Google Scholar