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Transport and Microstructure of Microcrystalline Silicon Alloys

Published online by Cambridge University Press:  28 February 2011

G. Lucovsky ,
C. Wang ,
M. J. Williams ,
Y. L. Chen  and
D. M. Mauer
G. Lucovsky
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202, USA
C. Wang
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202, USA
M. J. Williams
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202, USA
Y. L. Chen
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202, USA
D. M. Mauer
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202, USA
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Abstract

The microstructure and electrical properties of μc-Si and μc-Si,C prepared by remote plasma-enhanced chemical-vapor deposition, PECVD, are reviewed. The microstructure has been characterized by transmission electron microscopy, TEM, infrared, IR, absorption and Raman scattering. The electrical properties were characterized by temperature-dependent dark-conductivity measurements. These studies have explained significant quantitative differences between the carrier transport properties of μc-Si and μc-Si,C alloys in terms of a band offset model for the interfacial potential steps between the amorphous and crystalline constituents of these material systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 443
Copyright
Copyright © Materials Research Society 1993

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References

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