Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-25T17:41:27.435Z Has data issue: false hasContentIssue false
  • English
  • Français

Transmission Electron Microscopic Study of Precipitates in Fe-Doped InP Crystals Grown by Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  28 February 2011

O. Ueda ,
K. Nakai ,
S. Yamakoshi  and
I. Umebu
O. Ueda
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
K. Nakai
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
S. Yamakoshi
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
I. Umebu
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
Get access

Abstract

The nature and distribution of precipitates in Fe-doped InP crystals grown by metalorganic vapor phase epitaxy at 650°C are studied by transmission electron microscopy. The precipitates are spherical in shape, 4-20 nm in diameter, and uniformly distributed in the crystals. They are coherent FeP precipitates with certain orientation relationship to the InP. The precipitates are observed in crystals with Fe-doping gas flow rates of more than 20 ml/min. Their density increases from 8 × 1012 to 1 × 1014 cm-3, as the gas flow rate increases from 20-100 ml/min, while the size is almost constant. In crystals doped with less than 5 ml/min, precipitates are not observed. Crystals grown with a gas flow rate of 5 ml/min contain a Fe-concentration of about 1017 cm−3 which is the solubility limit of Fe in InP at 650°C. From these results, it is strongly suggested that when the doped Fe concentration exceeds the solubility limit, excess Fe atoms tend to condense in the matrix forming FeP precipitates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 509
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

l. Long, J. A., Riggs, V. G., and Johnston, W. D. Jr, J. Crystal Growth 69, 10 (1984).CrossRefGoogle Scholar
2. Tanaka, K., Nakai, K., Aoki, O., Sugawara, M., Wakao, K., and Yamakoshi, S., J. Appl. Phys. 61, 4698 (1987).Google Scholar
3. Kondo, M., Sugawara, M., Yamaguchi, A., Tanahashi, T., Isozumi, S., and Nakajima, K., Ext. Abst. of the 18th Conf. on Sol. Stat. Dev. and Mat. Tokyo pp 627 (1986).Google Scholar
4. Speier, P., Schemmel, G., and Kuebart, W., Electron. Lett. 22, 1216 (1986).CrossRefGoogle Scholar
5. Huang, H. and Wessels, B. W., J. Appl. Phys. 60, 4342 (1986).CrossRefGoogle Scholar
6. Kato, Y., Kasahara, K., Sugou, S., Yanase, T., and Henmi, N., Ext. Abst. of the 19th Conf. on Sol. Stat. Dev. and Mat. Tokyo pp 95 (1987).Google Scholar
7. Nakai, K., Ueda, O., Odagawa, T., Takanohashi, T., and Yamakoshi, S., Inst. Phys. Conf. Ser. 91, 199 (1987).Google Scholar
8. Rumsby, D., Ware, R. M., and Whitaker, M., J. Crystal Growth 54, 32 (1981).Google Scholar
9. Miyazawa, S. and Koizumi, H., J. Electrochem. Soc. 129, 2335 (1982).Google Scholar
10. Smith, N. A., Harris, I. R., Cockayne, B., and MacEwan, W. R., J. Crystal Growth 68, 517 (1984).Google Scholar
11. Nakahara, S., Chu, S. N. G., Long, J. A., Riggs, V. G., and Johnston, W. D. Jr, J. Crystal Growth 72, 693 (1985).Google Scholar