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Transmission Electron Microscope Study of Interfacial Reactions in Gold-Germanium Contact to Gallium Arsenide*

Published online by Cambridge University Press:  26 February 2011

Taeil Kim  and
D.D.L. Chung
Taeil Kim
Affiliation:
Department of Metallurgical Engineering and Materials Science, Carnegie-Mellon University, Pittsburgh, PA 15213
D.D.L. Chung
Affiliation:
Department of Metallurgical Engineering and Materials Science, Carnegie-Mellon University, Pittsburgh, PA 15213
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Abstract

The structure of 500 Å Au/500 A Ge/500 Å Au/GaAs (100) was studied by transmission electron microscopy after annealing at 350 – 500°C. Annealing at 350 – 450°C caused the formation of AuGeAs with a (110) texture, but this phase disappeared after annealing at 500°C. The hexagonal a-AuGa (or AuGa) was formed after annealing at 400°C, such that (111)Au // (0001)a, and [110]AU // [1120]a and there was perfect lattice match between Au (i.e., Au-rich solid solution) and a-AuGa. After annealing at 450°C or above, a phase tentatively identified as the hexagonal Au3Ga was formed and Ge (i.e., Ge-rich solid solution) became epitaxial to (100) GaAs. Annealing at 400°C caused Au to change from no texture to a (110) texture.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 437
Copyright
Copyright © Materials Research Society 1986

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Footnotes

*

Equipment supported by NSF, under Grant DMR 76–81561 A01

References

REFERENCES

1. Yoshiie, T., Bauer, C.L. and Milnes, A.G., Thin Solid Films 111, 149 (1984)Google Scholar
2. Ogawa, M., J. Appl. Phys. 51, 406 (1980).Google Scholar
3. Grovenor, C.R.M., Thin Solid Films 104, 409 (1983).Google Scholar
4. Steeds, J.W., Rackham, G.M. and D. Merton-|yn, Inst. Phys. Conf. Ser. 60, 387 (1981).Google Scholar
5. Christou, A., Solid State Electron. 22, 141 (1979).Google Scholar
6. Kuan, T.S., Batson, R.E., Jackson, T.N., Rupprecht, H. and Wilkie, E.L., J. Appl. Phys 54 6952 (1983).Google Scholar
7. Kim, Taeil and Chung, D.D.L., Thin Solid Films, in press.Google Scholar
8. Lakhani, A.A. and Urech, D.R., Mat. Res. Soc. Proc. 25, 551 (1984).Google Scholar
9. Cooke, J. and Hume-Rothery, W., J. Less-Common Metals 10, 42 (1966).Google Scholar