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Transition Metal Excited States in Silicon

Published online by Cambridge University Press:  26 February 2011

M. Kleverman ,
J. Olajos ,
G. Grossmann  and
H. G. Grimmeiss
M. Kleverman
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00 Lund, Sweden
J. Olajos
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00 Lund, Sweden
G. Grossmann
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00 Lund, Sweden
H. G. Grimmeiss
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-221 00 Lund, Sweden
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Abstract

Recent absorption and photoconductivity studies of deep transition-metal impurities in silicon are discussed, with emphasis on optical transitions from the deep ground state to shallow Coulomb excited states. The P3/2 line spectra of the deep Au and Pt acceptors closely resemble those of group II acceptors in silicon, whereas the P1/2 lines show resonance effects due to interaction with the valence band continuum. Behavior under uniaxial stress is compatible with D2d or C 2y point-group symmetry for the Au and Pt acceptors. A line spectrum in g-dopes Si can be attributed to excitations to shallow donor states since the phononassisted Fano resonances involve characteristic inter-valley phonons. Both the Ag donor spectrum and the corresponding Au spectrum are dominated by excited s-state transitions. Thus, the traditional fingerprint of a donor in silicon, i.e. the effective-mass like p-state series, is missing or at best observed weakly

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 141
Copyright
Copyright © Materials Research Society 1988

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References

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