Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-07-02T20:34:36.338Z Has data issue: false hasContentIssue false
  • English
  • Français

Transient Photoconductivity of GaN Thin Film On Sapphire Substrate

Published online by Cambridge University Press:  10 February 2011

Z. Z. Chen ,
B. Shen ,
R. Zhang ,
X. Y. Zhang ,
K. Yang ,
H. Chen ,
P. Chen ,
L. Zang ,
Y. G. Zhou  and
Y. D. Zheng
...Show all authors
Z. Z. Chen
Affiliation:
Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R.China
B. Shen
Affiliation:
Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R.China
R. Zhang
Affiliation:
Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R.China
X. Y. Zhang
Affiliation:
Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R.China
K. Yang
Affiliation:
Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R.China
H. Chen
Affiliation:
Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R.China
P. Chen
Affiliation:
Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R.China
L. Zang
Affiliation:
Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R.China
Y. G. Zhou
Affiliation:
Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R.China
Y. D. Zheng
Affiliation:
Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R.China
Z. S. Wu
Affiliation:
Department of Electronic Engineering, Nanjing University, Nanjing 210093, P.R.China
X. T. Sun
Affiliation:
Department of Electronic Engineering, Nanjing University, Nanjing 210093, P.R.China
F. Chen
Affiliation:
Department of Electronic Engineering, Nanjing University, Nanjing 210093, P.R.China
Get access

Abstract

We studied the transient photoconductivity(PC) properties of GaN thin film on (0001) sapphire substrate. The decay curves of PC obtained by YAG:Nd pulsed laser are divided into two special regions, which are the beginning and tail decay regions, corresponding to two time constants, 0.1 ms and 1.0 ms, respectively. Keeping the same light intensity and bias voltage, when the sample was heated to 300°C, the time constants are both reduced. It shows that there are a large number of traps at the position of tens of meV above the valence band edge. The PC ascends S-shaped when the data were collected during the first 200 ns. As the sample is not shined, the PC sharply reduces and oscillates, indicating that the carriers redistributed between the deep traps and the valence band. The experiment results are explained by the model that involves two hole trapping levels, the shallow trapping level and the deep trapping level. Moreover, the mechanism of the curves varied as the light intensities are also explained by the model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 303
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Nakamura, S.N., Mukai, T., and Senoh, M., Appl.Phys.Lett., 64, 1687 (1994).Google Scholar
[2] Khan, M. Asif, Kuznia, J.N., et al., Appl.Phys.Lett., 62, 1786 (1993).Google Scholar
[3] Khan, M.Asif, Bhattarai, A.R., et al., Appl.Phys.Lett., 63, 1214 (1993).Google Scholar
[4] Pankove, J.I.., Miller, E.A., et al., RCA ReV., 32, 383 (1971).Google Scholar
[5] Pankove, J.I., Hutchby, J.A., J.Appl.Phys., 47(12), 5387 (1976).Google Scholar
[6] Balagurov, L., Chong, P.J., Appl.Phys.Lett., 68(1), 43 (1996).Google Scholar
[7] Gotz, W., Johnson, N.M., et al., Appl.Phys.Lett., 68(24), 3470 (1996).Google Scholar
[8] Neugbauer, Jorgand Walle, Chris G Van de, Appl.Phys.Lett., 69(4), 503 (1996).Google Scholar
[9] Merz, C., Kunzer, M., et al., Semicond.Sci.Technol., 11, 712 (1996).Google Scholar
[10] Chen, G.D., Smith, M., et al., Appl.Phys.Lett., 68(20), 2784(1996).Google Scholar
[11] Volm, D., Oettinger, K., et al., Phys.Rev.B, 53(24), 16543 (1996).Google Scholar
[12] Qiu, C.H., Hoggatt, C., et al., Appl.Phys.Lett., 66(20), 2712 (1995).Google Scholar
[13] Qiu, C.H. and Pankove, J.I., Appl.Phys.Lett., 70(15), 1983 (1997).Google Scholar
[14] Kai, Yang, Linhong, Qin et al., Chin.Phys.Lett., 13(11), 874 (1996).Google Scholar
[15] Binet, F., Duboz, J.Y. et al., Appl.Phys.Lett., 69(9), 1202 (1996).Google Scholar
[16] Zhang, R., Yang, K. et al., J.Vac.Sci.Technol., A 14(3), 840 (1996).Google Scholar
[17] Liu, E.K., Physics of Semiconductor (in Chinese), National Industry Press, 1989, p.266.Google Scholar
[18] Chen, G.D., Smith, M. et al., Appl.Phys.Lett., 68(20), 2784 (1996).Google Scholar
[19] Tybulewicz, A., B.Sc. et al., PHOTOELECTRIC EFFECTS IN SEMICONDUCTORS (New York), 1964, p. 152.Google Scholar
[20] Ying, G.Y., Physics and Application of Photoconductivity (in Chinese), Electronic Industry Press, 1990, p.39.Google Scholar
[21] Chen, Z.Z., Shen, B. et al.(unpublished)Google Scholar