Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-26T09:16:40.416Z Has data issue: false hasContentIssue false
  • English
  • Français

Transient Infrared Stimulated Photoconductivity in a-SI:H at Low Temperatures

Published online by Cambridge University Press:  15 February 2011

S. Heck ,
P. Stradins  and
H. Fritzsche
S. Heck
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL 60637
P. Stradins
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL 60637
H. Fritzsche
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL 60637
Get access

Abstract

Dual beam photoconductivity with bandgap primary light and hv = 0.4- 0.6eV infrared light steps was measured with Ims time resolution in hydrogenated amorphous silicon (a-Si:H) at 4.2K. The results can be described by assuming that the photocurrent transients are due to energy-loss hopping of photocarriers and that the infrared light promotes recombination by reexciting photocarriers thereby enhancing the probability of tunneling recombination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 485
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shklovskii, B. I., Fritzsche, H. and Baranovskii, S. D., in “Transport, Correlation and Structural Defects,” ed. Fritzsche, H. (World Scientific, Singapore 1990) p. 161.Google Scholar
2. Vollmar, H.-P., Botzler, P., Sachse, T.-U. and Bindemann, R., J. Non-Cryst. Solids, 164–166, 603 (1993).Google Scholar
3. Street, R. A. and Biegelsen, D. K., Solid State Commun. 44, 501 (1982).Google Scholar
4. Boulitrop, F., “Optical Effects in Amorph. Semicond” ed. by Taylor, P. C. and Bishop, S. G., AIP Conf. 120, 178 (1984).Google Scholar
5. Tran, M. Q., Stradins, P. and Fritzsche, H., Mat. Res. Soc. Symp. Proc. 336, 431 (1994).Google Scholar