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Transient Capacitance Studies of a Low-Lying Electron Trap in n-type Silicon

Published online by Cambridge University Press:  15 February 2011

G. E. Jellison Jr. ,
J. W. Cleland  and
R. T. Young
G. E. Jellison Jr.
Affiliation:
Solid State Division, Oak Ridge National Laboratory*, Oak Ridge, Tennessee 37830
J. W. Cleland
Affiliation:
Solid State Division, Oak Ridge National Laboratory*, Oak Ridge, Tennessee 37830
R. T. Young
Affiliation:
Solid State Division, Oak Ridge National Laboratory*, Oak Ridge, Tennessee 37830
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Abstract

A new electron trap has been observed in electronirradiated n-type silicon at Ec − ET = 0.105 eV using transient capacitance techniques. It is found that the maximum transient capacitance response is observed only when the majority carrier pulse width is much smaller than some characteristic time constant, and when the time between pulses is much larger than another characteristic time constant. It is shown that this defect is related to an electron trap at Ec−ET = 0.172 eV (probably the oxygenvacancy or A-center); it is believed that this trap is induced by the electric field found in the depletion region of a p-n junction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 241
Copyright
Copyright © Materials Research Society 1981

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References

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