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Transient Capacitance Characterization of Deep Levels in Undoped and Si-Doped GaN

Published online by Cambridge University Press:  01 February 2011

S. Nakamura ,
P. Liu ,
M. Suhara  and
T. Okumura
S. Nakamura
Affiliation:
Department of Electrical Engineering, Tokyo Metropolitan University, 1-1 Minami-ohsawa, Hachioji, Tokyo 192-0397, Japan
P. Liu
Affiliation:
Department of Electrical Engineering, Tokyo Metropolitan University, 1-1 Minami-ohsawa, Hachioji, Tokyo 192-0397, Japan
M. Suhara
Affiliation:
Department of Electrical Engineering, Tokyo Metropolitan University, 1-1 Minami-ohsawa, Hachioji, Tokyo 192-0397, Japan
T. Okumura
Affiliation:
Department of Electrical Engineering, Tokyo Metropolitan University, 1-1 Minami-ohsawa, Hachioji, Tokyo 192-0397, Japan
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Abstract

The deep levels in both undoped and Si-doped GaN layer grown by metalorganic chemical vapor deposition have been characterized by photocapacitance and transient capacitance spectroscopy. The increase in the photocapacitance was observed in both GaN samples in the range of 1.8 to 2.2 eV. This is due to the photoionization of carriers from the deep levels associated with the yellow luminescence (YL). In addition, the transient capacitance measurements after the photoionization were also performed in the range of 1.8 to 3.4 eV. The notable transient of capacitance was observed at the photon energies of about 2.1 and 3.4 eV, the former could be associated with the change in the charge state of the YL center and latter might stem from some other defects capturing photogenerated carriers. By using the isothermal capacitance transient spectroscopy (ICTS) analysis, the ICTS peaks due to the deep levels associated with YL were detected at about t = 150 s in both GaN samples. In addition, another ICTS peak was detected only in the Si-doped GaN samples. It is considered that this peak is associated with the deep levels deeper than YL levels and the deeper levels originate from defects induced by Si doping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C3.39
Copyright
Copyright © Materials Research Society 2003

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References

[1] Akasaki, I., Amano, H., Kito, M., and Hiramatsu, K., J. Lumin. 48, 666 (1991).Google Scholar
[2] Nakamura, S., Mukai, T. and Senoh, M., Appl. Phys. Lett. 64, 1687 (1994).Google Scholar
[3] Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., and Burns, M., J. Appl. Phys. 76, 1363 (1994).Google Scholar
[4] Khan, M. A., Kuznia, J. N., Olson, D. T., Schaff, W., Burn, J. W., and Shur, M. S., Appl. Phys. Lett. 65, 1121 (1994).Google Scholar
[5] Nakamura, S., Senoh, M., Nagahama, S., Jwasa, N., Tamada, T., Matushita, T., Kiyoku, H., and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996).Google Scholar
[6] Götz, W., Johnson, N. M., Amano, H., and Akasaki, I., Appl. Phys. Lett. 65, 463 (1994).Google Scholar
[7] Hacke, P., Detchprohm, T., Hiramatsu, K., Sawaki, N., Tadatomo, K., and Miyake, K., J. Appl. Phys. 76, 304 (1994).Google Scholar
[8] Haase, D., Schmid, M., Kurner, W., Dornen, A., Harle, V., Scholz, F., Burkard, M., and Schweizer, H., Appl. Phys. Lett. 69, 2525 (1996).Google Scholar
[9] Calleja, E., Sánchez, F. J., Basak, D., Sánchez-García, M. A., Muñoz, E., Izpura, I., Calle, F., Tijero, J.M.G., Beaumont, B., Lorenzini, P., and Gibart, P., Phys. Rev. B 55, 4689 (1997).Google Scholar
[10] Wang, C. D., Yu, L. S., Lau, S. S., Yu, E. T., Kim, W., Botchkarev, A. E., and , Morkoç, Appl. Phys. Lett. 72, 1211 (1998).Google Scholar
[11] Ogino, T. and Aoki, M., Jpn. J. Appl. Phys. 35, L74 (1980).Google Scholar
[12] Neugebauer, J and Walle, C. G. Van de, Appl. Phys. Lett. 69, 503 (1996).Google Scholar
[13] Kaufmann, U., Kunzer, M., Obloh, H., Maier, M., Manz, Ch., Ramakrishnan, A., and Stantic, B., Phys. Rev. B 59, 5561 (1999).Google Scholar
[14] Hacke, P. and Okushi, H., Appl. Phys. Lett. 71, 524 (1997).Google Scholar