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Towards a Microscopic Interpretation of the Dielectric Function of Porous Silicon

Published online by Cambridge University Press:  15 February 2011

U. Rossow ,
U. Frotscher ,
D. E. Aspnes  and
W. Richter
U. Rossow
Affiliation:
North Carolina State Univ., Phys. Dept., Raleigh, NC 27695-8202 TU Berlin, Physik, PN6-1, D-10623 Berlin, Germany
U. Frotscher
Affiliation:
TU Berlin, Physik, PN6-1, D-10623 Berlin, Germany
D. E. Aspnes
Affiliation:
North Carolina State Univ., Phys. Dept., Raleigh, NC 27695-8202
W. Richter
Affiliation:
TU Berlin, Physik, PN6-1, D-10623 Berlin, Germany
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Abstract

The dielectric function of porous silicon layers depends strongly on the electronic properties of the nanostructure of the silicon skeleton. In this paper we discuss the main effects, as determined from spectroscopic ellipsometric measurements of the dielectric function of porous layers formed on p-doped material. Finite-size effects and the high inner surface area of the nanostructure lead to relaxation of k-momentum conservation as defined for infinite crystals and therefore to a broadening of the features in <ε> arising from interband critical points. In addition a small threshold energy shift is observed when the percolation of the structure is reduced. However, this shift is too small to explain red photoluminescence as a consequence of a pseudo-direct gap whose energy is blue-shifted by confinement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 209
Copyright
Copyright © Materials Research Society 1996

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References

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