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Titanium Tungsten (TiW) for Ohmic contacts to n-and p-type 4H-SiC

Published online by Cambridge University Press:  21 March 2011

S.-K. Lee ,
C.-M. Zetterling  and
M. Östling
S.-K. Lee
Affiliation:
KTH, Royal Institute of Technology, Dept. of Electronics, S-164 40, Kista, SWEDEN
C.-M. Zetterling
Affiliation:
KTH, Royal Institute of Technology, Dept. of Electronics, S-164 40, Kista, SWEDEN
M. Östling
Affiliation:
KTH, Royal Institute of Technology, Dept. of Electronics, S-164 40, Kista, SWEDEN
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Abstract

In the present work, we investigated sputtered titanium tungsten (TiW) contacts for Ohmic contacts to both n- and p-type 4H-SiC with long-term stability under high temperature (500°C).. Epitaxial layers with a doping concentration of 1.3×1019 and 6×1018 cm−3 were used. After high temperature annealing (>950°C) sputtered TiW contacts showed Ohmic behavior with good uniform distribution of the specific contact resistance. We obtained an average specific contact resistance (pc) of 4×10−5 Ωcm2 and 1.2 ∼ 1.7×10−4 Ωcm2 for p- and n-type, respectively from linear TLM measurement. We also found some variation of the specific contact resistance and the sheet resistance from our TLM measurement for p-type contacts. We will discuss this behavior with the measurement of SIMS. Long-term stability with a top-cap layer is also discussed

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H7.2
Copyright
Copyright © Materials Research Society 2001

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References

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