Hostname: page-component-84b7d79bbc-fnpn6 Total loading time: 0 Render date: 2024-08-01T00:35:43.589Z Has data issue: false hasContentIssue false
  • English
  • Français

Titanium Germanosilicide Phase Formation During The Ti-Si1-xGex Solid Phase Reactions

Published online by Cambridge University Press:  15 February 2011

D. B. Aldrich ,
Y. L. Chen ,
D. E. Sayers  and
R. J. Nemanich
D. B. Aldrich
Affiliation:
Currently at Texas Instruments, M/S 461, P.O. Box 655012, Dallas, TX 75265
Y. L. Chen
Affiliation:
Currently at Battelle, Pacific Northwest Labs, KZ-44, P.O. Box 999, Richland, WA 99362
D. E. Sayers
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
R. J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
Get access

Abstract

The effect of Si1−xGex alloy composition on the titanium germanosilicide phase formation sequence during the Ti-Si1−xGex solid phase reaction was examined. For the Ti-Si reaction the initial formation of C49 TiSi2 is followed, at higher temperatures, by the formation of C54 TiSi2. For the Ti-Ge reaction the initial formation of Ti6Ge5 is followed, at higher temperatures, by the formation of C54 TiGe2. It was determined that the Ti-Si1−xGex reaction follows three different reaction paths depending on the composition of the initial Si1−xGex alloy. For Si rich Si1−xGex alloys the Ti-Si1−xGex reaction follows a “Ti-Si like” reaction path (Ti+M ↠ C49 TiM2 ↠ C54 TiM2, where M = Si1−xGex). For Ge rich Si1−xGex alloys the reaction follows a “Ti-Ge like” reaction path (Ti+M ↠ Ti6M5 ↠ C54 TiM2). Both Ti6M5 and C49 TiM2 form during the reaction of titanium with Si1−xGex alloys in an intermediate composition range. Properties of the final C54 phase were observed to be strongly dependent on the phase formation sequence. Smooth continuous C54 titanium germanosilicide forms during the “Ti-Si like” reaction and discontinuous islanded C54 titanium germanosilicide forms during the “Ti-Ge like” reaction. An optimum Si1−xGex alloy composition range of 0.00 ≤ x ≤ 0.36 was determined for the formation of continuous- low-resistivity- C54 titanium germanosilicide films from the solid phase reaction of Ti and Si1−xGex alloy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 405
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Murarka, S. P., Metallization: theory and practice for VLSI and ULSI (Butterworth- Heinemann, Boston, MA, 1993).Google Scholar
2. Murarka, S. P., Silicidesfor VLSI applications (Academic Press, New York, NY, 1983).Google Scholar
3. Maex, K., Mater. Sci. Engin. R11, 53–153 (1993).Google Scholar
4. Ma, Z., Xu, Y., Allen, L. H., and Lee, S., J. Appl. Phys. 74, 2954–2956 (1993).Google Scholar
5. Aldrich, D. B., Jahncke, C. L., Nemanich, R. J., and Sayers, D. E., in Heteroepitaxy of dissimilar materials; Vol.221, edited by Farrow, R. F. C., Harbison, J. P., Peercy, P. S., and Zangwill, A. (Materials Research Society, Pittsburgh, PA, 1991), p. 343–348.Google Scholar
6. Thomas, O., d'Heurle, F. M., Delage, S., and Scilla, G., Appl. Surf. Sci. 38, 27–36 (1989).Google Scholar
7. Ashburn, S. P., Öztürk, M. C., Wortman, J. J., Harris, G., Honeycutt, J., and Maher, D. M., J. Electron. Mat. 21, 81–86 (1992).Google Scholar
8. Thomas, O., d'Heurle, F. M., and Delage, S., J. Mater. Res. 5, 1453–1461 (1990).Google Scholar
9. Aldrich, D. B., Chen, Y. L., Sayers, D. E., and Nemanich, R. J., in Silicides, Germanides, and Their Interfaces; Vol.320, edited by Fathauer, R. W., Mantl, S., Schowalter, L. J., and Tu, K. N. (Materials Research Society, Pittsburgh, PA, 1994), p. 305–310.Google Scholar
10. d'Heurle, F. M., J. Mater. Sci. 3, 167–195 (1988).Google Scholar
11. Aldrich, D. B., Nemanich, R. J., and Sayers, D. E., in Proceedings of the 7th International Conference on X-ray Absorption Fine Structure; Vol.32, Suppl. 32-2, edited by Kuroda, H., Ohta, T., Murata, T., Udagawa, Y., and Nomura, M. (Japanese Journal of Applied Physics, Tokyo, Japan, 1993), p. 725–727.Google Scholar
12. Aldrich, D. B., Nemanich, R. J., and Sayers, D. E., J. Mater. Res. 10, (1995).Google Scholar
13. Aldrich, D. B., Chen, Y. L., Sayers, D. E., Nemanich, R. J., Ashburn, S. P., and Oztuirk, M. C., J. Appl. Phys. 77, 5107–5115 (1995).Google Scholar