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TiSi2 Formation on Submicron Polysilicon Lines: Role of Line Width and Dopant Concentration

Published online by Cambridge University Press:  21 February 2011

E. Ganin ,
S. Wind ,
P. Ronsheim ,
A. Yapsir ,
K. Barmak ,
J. Bucchignano  and
R. Assenza
E. Ganin
Affiliation:
IBM Technology Products, East Fishkill IBM Research Division, Yorktown Heights
S. Wind
Affiliation:
IBM Technology Products, East Fishkill IBM Research Division, Yorktown Heights
P. Ronsheim
Affiliation:
IBM Technology Products, East Fishkill IBM Research Division, Yorktown Heights
A. Yapsir
Affiliation:
IBM Technology Products, East Fishkill IBM Research Division, Yorktown Heights
K. Barmak
Affiliation:
IBM Technology Products, East Fishkill IBM Research Division, Yorktown Heights
J. Bucchignano
Affiliation:
IBM Technology Products, East Fishkill IBM Research Division, Yorktown Heights
R. Assenza
Affiliation:
IBM Technology Products, East Fishkill IBM Research Division, Yorktown Heights
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Abstract

We report on a study of the effects of dopant concentration and linewidth on the formation of TiSi2 on polysilicon. The transformation from the C49 phase to the C54 phase is inhibited by a high concentration of either phosphorus or arsenic in blanket polysilicon films. For sub-half-micron lines, patterned in polysilicon doped with As or P, agglomeration is the key factor in the inability to produce low resistance silicide. The result is a critically shrinking process window for the attainment of low resistance VLSI interconnects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 109
Copyright
Copyright © Materials Research Society 1993

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References

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