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Time-Resolved Luminescence of Oxygen Related Defects in Aluminum Nitride

Published online by Cambridge University Press:  21 February 2011

J. H. Harris  and
R. A. Youngman
J. H. Harris
Affiliation:
BP Research, Warrensville Research Center, 4440 Warrensville Center Road, Cleveland, Ohio
R. A. Youngman
Affiliation:
BP Research, Warrensville Research Center, 4440 Warrensville Center Road, Cleveland, Ohio
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Abtract

A charged defect model for the formation of band-tail states, first proposed by Redfield et al. to understand the optical properties of Si doped GaAs [1], is applied to oxygen doped aluminum nitride (AIN) ceramics. In this case, oxygen substituting on a nitrogen site and (subsequently formed) aluminum vacancies comprise the charged centers. The results of optical absorption edge measurements as well as steady state and time-resolved luminescence between 10 and 300K are used to support this model. Finally, it is noted that the mixed covalent and ionic nature of bonding in AIN make it a model system for this charge defect picture, and thus explains the extremely large extent of the band-tail states in this material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 167: Symposium K – Advanced Electronic Packaging Materials , 1989 , 253
Copyright
Copyright © Materials Research Society 1990

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References

1. Redfield, D. and Afromowitz, A., Appl. Phys. Lett. 11, 138 (1967).Google Scholar
2. Redfield, D., Wittke, J.P. and Pankove, J.I., Phys. Rev. B 2, 1830 (1970).Google Scholar
3. Sugimoto, K., Kino Zairyo 54 (1987).Google Scholar
4. Kim, W.M., Stofko, E.J., Zanzucchi, P.J., Pankove, J.I., Ettenberg, M. and Gilbert, S.L., J. Appl. Phys. 44, 292 (1973).Google Scholar
5. Pastrnak, J. and Roskovcova, L., Phys. Stat. Sol. 26, 591 (1968).Google Scholar
6. Pastrnak, J., Pocesova, S. and Roskovcova, L., Czech. J. Phys. B24, 1149 (1974).Google Scholar
7. Pastrnak, J., Pocesora, S., Sanda, J. and Rose, J., Bull. Acad. Sci. USSR, Phys. Ser. 31, 123 (1973).Google Scholar
8. Youngman, R.A., Harris, J.H. and Chernoff, D.A., Proceedings of the MRS/ACS Meeting on Advanced Characterization Techniques in Ceramics (San Francisco, 1988).Google Scholar
9. Phase Diagrams for Ceramists, Levin, E.M. and McMurdie, H.F., eds. (American Ceramic Society, Columbus, Ohio, 1975) pg. 132.Google Scholar
10. Slack, G.A., J. Phys. Chem. Solids 34, 321 (1973).Google Scholar
11. Strehlow, W.H. and Cook, E.L., J. Phys. Chem. Ref. Data 2, 163 (1973).Google Scholar
12. Jeffrey, G.A., Parry, G.S. and Mozzi, R.L., J. Chem. Phys. 25, 1024 (1956).Google Scholar