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Three-Dimensional Finite Element Calculations of Thermal Stresses in Patterned GaAs / Si

Published online by Cambridge University Press:  22 February 2011

E. H. Lingunis ,
N. M. Haegel  and
N. H. Karam
E. H. Lingunis
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, CA 90024
N. M. Haegel
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, CA 90024
N. H. Karam
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
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Abstract

Three-dimensional elastic finite element analysis was used to investigate the stress state in patterned GaAs/Si squares with different width to thickness ratios. Quantitative results for stress relief close to free edges were obtained. Features not revealed by previous two-dimensional calculations show the necessity of the three-dimensional treatment. For large areas the calculations give an approximately uniform biaxial stress everywhere, with reduced magnitude close to free edges. This allows for straightforward interpretation of high spatial resolution luminescence spectra and precise stress measurement. Experimental results from low temperature photoluminescence show good agreement with the calculated stresses. Finally, the effects of adjacent layers of different materials on the stress in epitaxial semiconductor thin films is investigated (particularly the case of InP/GaAs/Si) and discussed in conjunction with previous results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 157
Copyright
Copyright © Materials Research Society 1992

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References

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