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Thin-Film Gd4 Bi3 Grown on a Glass Substrate

Published online by Cambridge University Press:  21 February 2011

Kyuya Baba ,
H. Ishii ,
I. Yamaguchi ,
O. Nakamura  and
T. Takeda
Kyuya Baba
Affiliation:
Hachioji Research Center, Casio Computer Co. Ltd., 2951-5 Ishikawa-cho, Hachioji, Tokyo 192, Japan
H. Ishii
Affiliation:
Hachioji Research Center, Casio Computer Co. Ltd., 2951-5 Ishikawa-cho, Hachioji, Tokyo 192, Japan
I. Yamaguchi
Affiliation:
Hachioji Research Center, Casio Computer Co. Ltd., 2951-5 Ishikawa-cho, Hachioji, Tokyo 192, Japan
O. Nakamura
Affiliation:
Hachioji Research Center, Casio Computer Co. Ltd., 2951-5 Ishikawa-cho, Hachioji, Tokyo 192, Japan
T. Takeda
Affiliation:
Hachioji Research Center, Casio Computer Co. Ltd., 2951-5 Ishikawa-cho, Hachioji, Tokyo 192, Japan
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Abstract

Sputtered thin-films of Gd-Bi (4:3 in atomic ratio) were annealed in vacuum under various annealing conditions. The samples annealed at a temperature near 530°C and 4 hours contained 40% of poly-crystalline Gd4Bi3 phase, which is of the anti-Th3P4 structure. The main peak in the x-ray diffraction spectrum due to Gd4Bi3 is of (310). The phase of Gd4Bi3 was not found for a lower annealing temperature; for a higher annealing temperature (above 550°C), this phase could not be observed, because other phases or structures were beginning to grow, e. g. Gd5Bi3 and/or GdBi phases.

The Curie temperature of the Gd4Bi3 thin-films was estimated to be about 330 K; this value is nearly the same as that of bulk Gd4Bi3. The residual resistance of the Gd4Bi3 thin-films was several times as large as that of bulk Gd4Bi3 poly-crystal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 151: Symposium G – Growth, Characterization and Properties of Ultrathin Magnetic Films and Multilayers , 1989 , 289
Copyright
Copyright © Materials Research Society 1989

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References

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