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Thin HfO2 Films Deposited via Alternating Pulses of Hf(NO3)4 and HfCl4

Published online by Cambridge University Press:  01 February 2011

J.F. Conley Jr ,
Y. Ono ,
R. Solanki  and
D.J. Tweet
J.F. Conley Jr
Affiliation:
IC Process Technology Laboratory, Sharp Labs of America, Camas, WA, 98607
Y. Ono
Affiliation:
IC Process Technology Laboratory, Sharp Labs of America, Camas, WA, 98607
R. Solanki
Affiliation:
Oregon Graduate Institute, Department of Electrical and Computer Engineering, Beaverton, OR
D.J. Tweet
Affiliation:
IC Process Technology Laboratory, Sharp Labs of America, Camas, WA, 98607
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Abstract

A novel technique for deposition of metal oxide films is demonstrated in which alternating pulses of metal-nitrate and metal-chloride precursors are used. The metal nitrate, Hf(NO3)4, acts as the oxidizing agent, avoiding the use of a separate oxidizing species such as H2O. This method results in greater than one monolayer per cycle deposition rate of HfO2 films compared to the use of a single precursor and enables deposition directly on H-terminated Si due to the reactivity of Hf(NO3)4. It was found that performing a short in-situ anneal after every deposition cycle increases film density and improves electrical characteristics. Films are characterized via capacitance vs. voltage, current vs. voltage, spectroscopic ellipsometry, and x-ray diffraction and reflectivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D3.7
Copyright
Copyright © Materials Research Society 2003

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