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Thin Films of p-Type CdTe Grown with Ion-Beam-Assisted Doping
Published online by Cambridge University Press: 25 February 2011
Extract
The purpose of the present work is to investigate p-CdTe thin films grown by ionassisted doping (IAD). Controlled doping in homo-epitaxial films resulting in carder densities up to 2×1017 cm-3 was obtained using P ions as the dopant. About 1.5% of the impinging P ions became electrically active in the films. Solar cells of n-CdS/p-CdTe were prepared and used as a diagnostic tool in understanding the p-CdTe films.
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- Copyright © Materials Research Society 1989