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Thin Films of GeC Deposited Using a Unique Hollow Cathode Sputtering Technique

Published online by Cambridge University Press:  01 February 2011

James L. Huguenin-Love ,
Rodney J. Soukup ,
Natale J. Ianno ,
Jason S. Schrader  and
Vikram L. Dalal
James L. Huguenin-Love
Affiliation:
Department of Electrical Engineering, University of Nebraska-Lincoln, 209N WSEC, Lincoln, NE, 68588-0511
Rodney J. Soukup
Affiliation:
rsoukup@unl.eduUniversity of Nebraska-LincolnDepartment of Electrical Engineering209N WSECLincolnNE68588-0511United States
Natale J. Ianno
Affiliation:
nianno@unl.edu, University of Nebraska-Lincoln, Department of Electrical Engineering, 209N WSEC, Lincoln, NE, 68588-0511, United States
Jason S. Schrader
Affiliation:
jschrader@gmail.com, University of Nebraska-Lincoln, Department of Electrical Engineering, 209N WSEC, Lincoln, NE, 68588-0511, United States
Vikram L. Dalal
Affiliation:
vdalal@iastate.edu, Iowa State University, Ames, IA, 50011, United States
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Abstract

Experimental results on thin films of the new material GexC1-x, deposited by a unique dual plasma hollow cathode sputtering technique are presented here. The (Ge, C) system is extremely promising since the addition of C to Ge has reduced the lattice dimensions enough to allow a lattice match to silicon, while increasing the bandgap close to that of c-Si. The sputtering is accomplished by igniting a dc plasma of the Ar and H2 gases which are fed through Ge and C nozzles, cylindrical tubes 30 mm in length with an 8 mm O.D. and a 3 mm I.D.

The basic material, optical, and structural properties were analyzed. Film characterization was performed using Fourier transform infra-red spectroscopy (FTIR), X-ray diffraction (XRD), scanning electron microscopy (SEM), and Auger electron spectroscopy. Additional measurements such as Tauc bandgap, conductivity as a function of temperature and light intensity, and film uniformity have been made. The film properties from a variety of deposition conditions are discussed. The measurements made indicate that the films can be grown so that the C enters the material at lattice sites. In addition, the GexC1-x films absorb photons much more efficiently than either c-Si or c-Ge.

Initial results on Al doped films are presented.

Keywords

absorptionsputteringsemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A07-03
Copyright
Copyright © Materials Research Society 2006

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References

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