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Thin Film Growth Using Low-Energy Multi-Ion Beam Deposition System

Published online by Cambridge University Press:  16 February 2011

S. Shimizu ,
N. Sasaki ,
S. Ogata ,
O. Tsukakoshi ,
S. Seki  and
H. Yamakawa
S. Shimizu
Affiliation:
ULVAC JAPAN, Ltd., Hagisono, Chigasaki, Kanagawa, Japan
N. Sasaki
Affiliation:
ULVAC JAPAN, Ltd., Hagisono, Chigasaki, Kanagawa, Japan
S. Ogata
Affiliation:
ULVAC JAPAN, Ltd., Hagisono, Chigasaki, Kanagawa, Japan
O. Tsukakoshi
Affiliation:
ULVAC JAPAN, Ltd., Hagisono, Chigasaki, Kanagawa, Japan
S. Seki
Affiliation:
ULVAC JAPAN, Ltd., Hagisono, Chigasaki, Kanagawa, Japan
H. Yamakawa
Affiliation:
ULVAC JAPAN, Ltd., Hagisono, Chigasaki, Kanagawa, Japan
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Abstract

A high-current, low-energy multi-ion beam deposition system has been developed for the fabrication of tailored new materials. This system consists of two ion sources, a dual-sector type mass analyzer and a deceleration system. Several ion species can be extracted successively from the two ion sources by switching the mass analyzer selection. Artificially structured materials, especially having a layered structure, can be grown by the fine control of the growth process of each layer. Ar* ion deceleration characteristics of this ion beam deposition system and preliminary results about the epitaxial growth of Ca film on Si(100) are shown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 347
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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