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Thermomechanical Properties of Hydrogen Silsesquioxanes

Published online by Cambridge University Press:  15 February 2011

W.-Y. Shih ,
J.-H. Zhao ,
A. J. McKerrow ,
E. T. Ryan ,
K. J. Taylor  and
P. S. Ho
W.-Y. Shih
Affiliation:
Semiconductor Process & Device Center, Texas Instruments Inc., Dallas, TX 75243
J.-H. Zhao
Affiliation:
Materials Lab. for Interconnect and Packaging, The Univ. of Texas, Austin, TX 78712
A. J. McKerrow
Affiliation:
Semiconductor Process & Device Center, Texas Instruments Inc., Dallas, TX 75243
E. T. Ryan
Affiliation:
Materials Lab. for Interconnect and Packaging, The Univ. of Texas, Austin, TX 78712
K. J. Taylor
Affiliation:
Semiconductor Process & Device Center, Texas Instruments Inc., Dallas, TX 75243
P. S. Ho
Affiliation:
Materials Lab. for Interconnect and Packaging, The Univ. of Texas, Austin, TX 78712
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Abstract

Using Si and GaAs substrates, the coefficient of thermal expansion (CTE) and the bi-axial modulus of thin hydrogen silsesquioxanes (HSQ) films are deduced by means of wafer curvature measurement. The same properties of plasma-enhanced CVD oxide are also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 476: Symposium N – Low-Dielectric Constant Materials III , 1997 , 173
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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