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Thermoelectric Transport Properties of ReSi1.75 Thin Films

Published online by Cambridge University Press:  10 February 2011

C. A. Kleint ,
A. Heinrich ,
H. Griessmann ,
D. Hofmann ,
H. Vinzelberg ,
J. Schumann ,
D. Schlaefer ,
G. Behr  and
L Ivanenko
C. A. Kleint
Affiliation:
Institute of Solid State and Materials Research Dresden Dept. of Thin Film Systems and Nanostructures, Helmholtzstr. 20, D-01069 Dresden, Germany
A. Heinrich
Affiliation:
Institute of Solid State and Materials Research Dresden Dept. of Thin Film Systems and Nanostructures, Helmholtzstr. 20, D-01069 Dresden, Germany
H. Griessmann
Affiliation:
Institute of Solid State and Materials Research Dresden Dept. of Thin Film Systems and Nanostructures, Helmholtzstr. 20, D-01069 Dresden, Germany
D. Hofmann
Affiliation:
Institute of Solid State and Materials Research Dresden Dept. of Thin Film Systems and Nanostructures, Helmholtzstr. 20, D-01069 Dresden, Germany
H. Vinzelberg
Affiliation:
Institute of Solid State and Materials Research Dresden Dept. of Thin Film Systems and Nanostructures, Helmholtzstr. 20, D-01069 Dresden, Germany
J. Schumann
Affiliation:
Institute of Solid State and Materials Research Dresden Dept. of Thin Film Systems and Nanostructures, Helmholtzstr. 20, D-01069 Dresden, Germany
D. Schlaefer
Affiliation:
Institute of Solid State and Materials Research Dresden Dept. of Thin Film Systems and Nanostructures, Helmholtzstr. 20, D-01069 Dresden, Germany
G. Behr
Affiliation:
Institute of Solid State and Materials Research Dresden Dept. of Thin Film Systems and Nanostructures, Helmholtzstr. 20, D-01069 Dresden, Germany
L Ivanenko
Affiliation:
Institute of Solid State and Materials Research Dresden Dept. of Thin Film Systems and Nanostructures, Helmholtzstr. 20, D-01069 Dresden, Germany
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Abstract

Epitaxial ReSi1.75 thin films of variable thickness between 15nm and 150nm have been prepared in an one step process by Facing Target Sputtering (FTS) onto heated (100) and (111)Si and SOS wafers. The epitaxial relations and film structure have been investigated by Xray diffraction and transmission electron microscopy. Epitaxial growth was found at a substrate temperature of 1070K. Thermoelectric properties were measured between 100K and 450K and compared to the transport behavior of bulk ReSi1.75 and polycrystalline films. A distinct dependence of both the conductivity and thermopower was found on the film thickness, on unintentional doping and on the film structure. The results show that epitaxial ReSi1.75 films prepared by FTS can be a basis for further investigations of thermoelectric silicide/silicon multilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 545: Symposium Z – Thermoelectric Materials 1998 - The Next Generation… , 1998 , 165
Copyright
Copyright © Materials Research Society 1999

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