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Thermoelectric properties of Mg2Si1−xCx crystals grown by the vertical Bridgman method

Published online by Cambridge University Press:  01 February 2011

Takashi Sakuma ,
Yoshinori Higuchi ,
Masayasu Akasaka ,
Tsutomu Iida  and
Yoshifumu Takanashi
Takashi Sakuma
Affiliation:
m_akasak@rs.noda.tus.ac.jp, student, 2641 Yamazaki, noda, Chiba, 278-8510, Japan
Yoshinori Higuchi
Affiliation:
iida_tsu@rs.noda.tus.ac.jp, Japan
Masayasu Akasaka
Affiliation:
iida_tsu@rs.noda.tus.ac.jp, Japan
Tsutomu Iida
Affiliation:
iida_tsu@rs.noda.tus.ac.jp, Japan
Yoshifumu Takanashi
Affiliation:
iida_tsu@rs.noda.tus.ac.jp, Japan
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Abstract

Multicrystalline Mg2Si crystals were grown using a Brigdman method combined with a die-casting growth technique. Although molten and/or vapor-phase Mg at elevated growth temperatures exhibit high chemical reactivity with the surrounding crucible materials, the use of an alumina crucible with a BN coating allowed single phase crystal growth and Mg2Si of good crystalline quality. Incorporation of carbon into the Mg2Si was observed to form Mg2Si1−xCx. For x=0.01 and 0.03, a lower thermal conductivity and higher figure of merit than those of Mg2Si were observed in the temperature range from room temperature to 773 K. The maximum figure of merit was 0.62 at 773 K for a Mg2Si0.99C0.01 sample.

Keywords

thermoelectricitycrystal growthMg
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 886: Symposium F – Materials and Technologies fore Direct Thermal-to-Electric Energy Conversion , 2005 , 0886-F11-13
Copyright
Copyright © Materials Research Society 2006

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References

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