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Thermoelectric Properties of Bi2Te3-Sb2Te3 Compounds Prepared by Ma-Pulse Discharge Sintering Process

Published online by Cambridge University Press:  21 February 2011

R.E. Park
Affiliation:
Materials Engineering Division, Tohoku National Industrial Research Institute, AIST, MITI, endai 983-8551, Japan, repark@tniri.go.jp
Y.H. Park
Affiliation:
Materials Engineering Division, Tohoku National Industrial Research Institute, AIST, MITI, endai 983-8551, Japan
T. Abe
Affiliation:
Materials Engineering Division, Tohoku National Industrial Research Institute, AIST, MITI, endai 983-8551, Japan
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Abstract

The Bi2Te3-Sb2Te3 compounds with the composition of useful thermoelectric cooling materials were prepared by mechanical alloying-pulse discharge sintering process. Effects of the process on the Seebeck coefficient, electrical resistivity and thermal conductivity were investigated. Temperature dependence of the Hall coefficient was also observed in the temperature range 80 - 325 K.

The figure of merit, Z, was found to be about 4.0 × 10−1K−1 at room temperature in the 25%Bi2Te3-75%Sb2Te3 composition sintered at 618K using grain refined mechanically alloyed powders which had the size of under 32 μm. The value of Z was remarkably improved with a decrease of the thermal conductivity shown in the fine grain compacts fabricated by mechanical alloying-pulse discharge sintering process.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Yim, W.M. and Rosi, F.D., Solid State Electronics 15, p. 11211140 (1972).Google Scholar
2. Suno, K., Sakai, M., Watanabe, H., and Shinmei, M., Proc. 12th Inter. Conf. Thermoelectrics, Inst. Elec. Eng. Jpn., p. 252255 (1993).Google Scholar
3. Champness, C.H., Chiang, P.T. and Parekh, P., Canadian J. Phys. 43, p. 653669 (1965).Google Scholar
4. Testardi, R.L., Bierly, J.N. Jr, and Donahoe, F.J., J. Phys. Chem. Solids 23, p. 12091217 (1962).Google Scholar
5. Fleurial, J.P., Gailliard, L., Triboulet, R., Scherrer, H. and Scherrer, S., J. Phys. Chem. Solids 49, p. 12371247 (1988).Google Scholar