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Thermodynamic Simulation of MOCVD YBa2Cu3O7−x Thin Film Deposition

Published online by Cambridge University Press:  15 February 2011

C. Bernard ,
F. Weiss ,
A. Pisch  and
R. Madar
C. Bernard
Affiliation:
L.T.P.C.M. – Enseeg, BP.75, 38402 St Martin d'Hères, France.
F. Weiss
Affiliation:
LMGP, BP.46, 38402 St Martin d'Hères, France.
A. Pisch
Affiliation:
L.T.P.C.M. – Enseeg, BP.75, 38402 St Martin d'Hères, France. LMGP, BP.46, 38402 St Martin d'Hères, France.
R. Madar
Affiliation:
LMGP, BP.46, 38402 St Martin d'Hères, France.
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Abstract

Chemical Vapour Deposition of YBa2Cu3O7−x superconductors using organometallic precursor materials involves the formation of a great variety of condensed phases (oxides, carbonates, hydroxides, carbides, hydrides) and a complex gas phase. Therefore, the possibility of calculating the stability ranges of the different phases susceptible of being deposited and the influence of the main experimental parameters (precursor partial pressure, oxygen partial pressure, total pressure, temperature) is very attractive. Recently, some initial attempts have been published, but the authors did not have sufficiently complete and reliable thermodynamic data on the species involved in the process. These results will be discussed. Furthermore, a homogeneous and complete set of data for the whole system will be presented, and the reactions of the deposition process will be simulated on the basis of this data set. The most important results will be compared to the previous calculations and to recent experimental work.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 139
Copyright
Copyright © Materials Research Society 1994

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