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Thermally Driven In-Situ Removal of Native Oxide Using Anhydrous Hydrogen Fluoride

Published online by Cambridge University Press:  21 February 2011

Pushkar P. Apte ,
Heungsoo Park ,
Krishna C. Saraswat  and
C. R. Helms
Pushkar P. Apte
Affiliation:
currently with Texas Instruments, Dallas, TX 75265
Heungsoo Park
Affiliation:
Stanford University, Stanford, CA 94305
Krishna C. Saraswat
Affiliation:
Stanford University, Stanford, CA 94305
C. R. Helms
Affiliation:
Stanford University, Stanford, CA 94305
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Abstract

In-situ native-oxide removal is critical for epitaxial single-crystal silicon deposition, for polysilicon emitters and contacts and for ultrathin gate dielectric films in integrated circuit (IC) fabrication. We have developed an in-situ, thermally-driven, anhydrous hydrogen fluoride (AHF)-based native-oxide removal technique in which the wafer is treated by AHF at low temperatures (300-400°C) and a short (10 sec) 950°C ‘spike’ in AHF-H2 immediately prior to Si deposition. This process removes native oxides formed by standard wet cleans such as HC1:H202 and NH4OH:H202, as well as native oxides formed by the clean-room ambient. Further, the technique is an effective pre-clean for both polysilicon and epitaxial silicon deposition. This flexibility, combined with other salient features such as simplicity and a low thermal budget, make the process eminently suited for IC fabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 281
Copyright
Copyright © Materials Research Society 1994

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References

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