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Thermal-CVD Produced Amorphous-Silicon Thin-Film Transistors-Ambipolar Characteristics

Published online by Cambridge University Press:  25 February 2011

Hiroshi Kanoh ,
Osamu Sugiura ,
Paul A. Breddels  and
Masakiyo Matsumura
Hiroshi Kanoh
Affiliation:
Department of Physical Electronics, O-okayama, Meguro-ku, Tokyo 152, Japan
Osamu Sugiura
Affiliation:
Department of Physical Electronics, O-okayama, Meguro-ku, Tokyo 152, Japan
Paul A. Breddels
Affiliation:
On leave of absence from Philips Research Lab., The Netherlands
Masakiyo Matsumura
Affiliation:
Department of Physical Electronics, O-okayama, Meguro-ku, Tokyo 152, Japan
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Abstract

Amorphous-silicon thin-film transistors (a-Si TFTs) have been fabricated by using an a-Si layer deposited by low-temperature thermal-CVD method using higher silanes. The TFT with thermally grown SiO2 gate was operated in both the n-channel mode and the p-channel mode. The maximum field-effect mobility and typical on/off current ratio were 1.5 cm2/Vs and 107 for the n-channel operation, and 0.2 cm2/Vs and 106 for the p-channel operation, respectively. Free electron mobility in the conduction band and free hole mobility in the valence band have been estimated, using the temperature dependence of the field-effect mobilities. It was found that the hole mobility is as high as the electron mobility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 367
Copyright
Copyright © Materials Research Society 1990

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References

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