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Thermal Stability of Si/Ge Hetero-Interface Grown by Atomic-Layer Epitaxy

Published online by Cambridge University Press:  10 February 2011

Keiji Ikeda ,
Jiro Yanase ,
Satoshi Sugahara  and
Masakiyo Matsumura
Keiji Ikeda
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 0-okayama, Meguro-ku, Tokyo 152-8550, JAPAN, ikeda@pe.titech.ac.jp;
Jiro Yanase
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 0-okayama, Meguro-ku, Tokyo 152-8550, JAPAN, URL: http://silicon.pe.titech.ac.jp
Satoshi Sugahara
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 0-okayama, Meguro-ku, Tokyo 152-8550, JAPAN, URL: http://silicon.pe.titech.ac.jp
Masakiyo Matsumura
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 0-okayama, Meguro-ku, Tokyo 152-8550, JAPAN, URL: http://silicon.pe.titech.ac.jp
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Abstract

Thermal stability has been evaluated for ALE-grown Si/Ge interfaces by co-axial impact collision ion scattering spectroscopy. The IML-thick Si layer on Ge was stable only at less than 360°C. The 2ML-thick Si layer on Ge, however, was stable up to 550°C, and Si layers could be also ALE-grown successively on the 2ML-thick Si layer on Ge, while keeping the interface abrupt, since the Si-ALE growth temperature was about 530°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 33
Copyright
Copyright © Materials Research Society 2000

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References

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