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Thermal stability and structural evolution of low-K Fluorinated amorphous carbon during thermal annealing

Published online by Cambridge University Press:  10 February 2011

Hongning Yang ,
Douglas J. Tweet ,
Yanjun Ma ,
Tue Nguyen ,
David R. Evans  and
S.-T. Hsu
Hongning Yang
Affiliation:
Sharp Microelectronics Technology, Inc., 5700 NW Pacific Rim Blvd., Camas, WA 98607
Douglas J. Tweet
Affiliation:
Sharp Microelectronics Technology, Inc., 5700 NW Pacific Rim Blvd., Camas, WA 98607
Yanjun Ma
Affiliation:
Sharp Microelectronics Technology, Inc., 5700 NW Pacific Rim Blvd., Camas, WA 98607
Tue Nguyen
Affiliation:
Sharp Microelectronics Technology, Inc., 5700 NW Pacific Rim Blvd., Camas, WA 98607
David R. Evans
Affiliation:
Sharp Microelectronics Technology, Inc., 5700 NW Pacific Rim Blvd., Camas, WA 98607
S.-T. Hsu
Affiliation:
Sharp Microelectronics Technology, Inc., 5700 NW Pacific Rim Blvd., Camas, WA 98607
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Abstract

Highly crosslinked a-F:C films can undergo a significant change after thermal annealing, where the film expands by ∼3%, the density reduces by ∼10% and the internal stress changes from compressive to tensile. The loss of fluorine concentration and the reduction of CF. are accompanied by the transition of (C-C, sp3) to (C=C, sp2) groups. After annealing, the dielectric constant is reduced and the leakage current increases slightly. Most importantly, these changes occur only at the initial stage of annealing. After the initial annealing, the a-F:C film tends to be thermally stable and retains reasonably good electrical properties as a low-k interlayer dielectric. The profound impact of these results on Cu/a-F:C integration will be briefly discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 511: Symposium E – Low Dielectric Constant Materials IV , 1998 , 233
Copyright
Copyright © Materials Research Society 1998

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