Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-06-28T08:23:27.157Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Emission and Vertical-Transport Studies in III/V Semiconductor Multi-Quantum-Well Structures

Published online by Cambridge University Press:  21 February 2011

S. Weber ,
W. Limmer ,
K. Thonke ,
R. Sauer ,
T. Sauer ,
D. Geiger ,
H. Meyer  and
K. Panzlaff
S. Weber
Affiliation:
Abteilung Halbleiterphysik, Albert-Einstein-Allee 45, Universität Ulm, D 89069 Ulm, Germany
W. Limmer
Affiliation:
Abteilung Halbleiterphysik, Albert-Einstein-Allee 45, Universität Ulm, D 89069 Ulm, Germany
K. Thonke
Affiliation:
Abteilung Halbleiterphysik, Albert-Einstein-Allee 45, Universität Ulm, D 89069 Ulm, Germany
R. Sauer
Affiliation:
Abteilung Halbleiterphysik, Albert-Einstein-Allee 45, Universität Ulm, D 89069 Ulm, Germany
T. Sauer
Affiliation:
Abteilung Halbleiterphysik, Albert-Einstein-Allee 45, Universität Ulm, D 89069 Ulm, Germany
D. Geiger
Affiliation:
Abteilung Halbleiterphysik, Albert-Einstein-Allee 45, Universität Ulm, D 89069 Ulm, Germany
H. Meyer
Affiliation:
IBM Forschungszentrum Zürich, Säumerstr. 4, CH 8803 Rüschlikon, Switzerland
K. Panzlaff
Affiliation:
Abteilung Optoelektronik, Albert-Einstein-Allee 45, Universitàt Ulm, D 89069 Ulm, Germany
Get access

Abstract

For the thermal quenching of quantum well (QW) photoluminescence (PL) controversal de-activation energies have been reported. Values range from the total exciton (or electron-hole) binding energy Ex to half of Ex or to the binding energy of the shallower bound particle. We resolve this controversy by performing steady-state measurements both under high and extremely low (Iex≈l μW/mm2) excitation conditions on a series of multiple QW structures of the material systems InxGa1-xAs/GaAs and GaAs/AlyGa1-yAs. For high and low excitation, we find that the final de-activation step is associated with Ex. In an intermediate temperature range, the first decade of PL quenching is governed by a de-activation energy close to the binding energy of the shallower bound particle.

Also performed were temperature dependent photoluminescence excitation (PLE) measurements under high injection in InxGa1-xAs/GaAs double QWs with additional AlyGa1-yAs cladding barriers. Vertical transport between the QWs is observed and the underlying de-activation energies are found to be equal to the total exciton binding energies Ex We discuss our findings in the frame of a simple model for the thermalization of electrons and holes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 489
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Oberli, D.Y., Shah, J., J.L, Jewell, Damen, T.C., and Chand, N., Appl. Phys. Lett. 54,1028 (1989).Google Scholar
2 Gurioli, M., Martinez-Pastor, J., Colocci, M., Deparis, C., Chastaingt, B., and Massies, J., Phys. Rev. B, 46, 6922 (1992).Google Scholar
3 Gurioli, M., Vinattieri, A., Colocci, M., Departs, C., Massies, J., Neu, G., Bosacchi, A., and Franchi, S., Phys. Rev. B, 44, 3115 (1991).Google Scholar
4 Michler, P., Hangleiter, A., Moritz, A., Härle, V., and Scholz, F., Phys. Rev. B 47,1671 (1993).Google Scholar
5 Bacher, G., Schweitzer, H., Kovaç, J., Forchel, A., Nickel, H., Schlapp, W., and Lösch, R., Phys. Rev. B, 43, 9312 (1992).Google Scholar
6 Lambkin, J.D., Dunstan, DJ., Homewood, K.P., Howard, L.K., and Emeny, M.T., Appl. Phys. Lett., 57 (19), 1986 (1990).Google Scholar
7 Weber, S., Limmer, W., Thonke, K., Sauer, R., Panzlaff, K., and Bacher, G., (13th GENERAL CONFERENCE of the Condensed Matter Division EUROPEAN PHYSICAL SOCIETY in 1993).Google Scholar
8 Feldmann, J., Peter, G., Göbel, E.O., Dawson, P., Moore, K., Foxon, C., and Elliot, R.J., Phys. Rev. Lett., 59 2337 (1987).Google Scholar