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Thermal CVD of Amorphous Germanium Films From 2, 5-Bis (Tert.-Butyl) -2, 5-Diaza-l-Germa-Cyclopentane Organometallic Precursor

Published online by Cambridge University Press:  16 February 2011

F. Glatz
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstr. 4, D-85747 Garching, Germany
J. prokop
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstr. 4, D-85747 Garching, Germany
S. Vepřek
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstr. 4, D-85747 Garching, Germany
F.R. Klingan
Affiliation:
Institute for Inorganic Chemistry, Technical University Munich, Lichtenbergstr. 4, D-85747 Garching, Germany
W.A. Herrmann
Affiliation:
Institute for Inorganic Chemistry, Technical University Munich, Lichtenbergstr. 4, D-85747 Garching, Germany
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Abstract

A novel organometallic germylene precursor has been synthesized and used for the deposition of amorphous germanium by thermal OM CVD at temperatures below 300°C. The films are of high purity with an oxygen content below the present detection limit of about < 1018 cm−3. Preliminary results on the electronic properties are reported.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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[5] Glatz, F., Ph D Thesis, Technical University Munich 1993 Google Scholar
The calibration has been done on a-Ge films deposited by plasma CVD from germane at floating potential and subsequently oxidized. During the step-vize oxidation the in-tegralabsorption in the Ge-0 stretching mode region around 818 cm−2 has been measured and the absolute amount of incorporated oxygen has been determined by the weight increase of the sample. We have checked by the IR spectroscopy that oxygen was the only impurity incorporated into the f i lnu The calibration factor determined in this way was 4.1018 cm−2.Google Scholar