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Thermal Conductivity of N-Type Si-Ge

Published online by Cambridge University Press:  15 February 2011

Paul G. Klfmens
Paul G. Klfmens*
Affiliation:
University of Connecticut, Institute of Materials Science, Storrs, CT 06269-3136
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Abstract

The lattice thermal conductivity of 80-20 Si-Ge is treated theoretically for the case of the Fermi energy positioned for optimum figure of merit. The spectral distribution of the lattice conductivity is limited by anharmonic interactions, by the randomness of the Si-Ge lattice and, at low frequencies, by the interaction with free carriers and neutral donors. The two latter processes dominate over grain boundary scattering. The spectral conductivity is sharply peaked around 0.1 of the Debye frequency. A further reduction in lattice conductivity can be obtained by small insulating inclusions. This is partially offset by a reduction in electronic conductivity, but results in some improvement in the figure of merit.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 234: Symposium V – Modern Perspectives on Thermoelectrics and Related Materials , 1991 , 87
Copyright
Copyright © Materials Research Society 1991

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References

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